TOPIC> Semiconductor Quantum Devices and Physics

High power \lambda ~ 8.5 μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K

Teng Fei1,2, Shenqiang Zhai1, Jinchuan Zhang1, Ning Zhuo1, Junqi Liu1,2, Lijun Wang1,2, Shuman Liu1, Zhiwei Jia1, Kun Li1, 2, Yongqiang Sun1, 2, Kai Guo1, Fengqi Liu1, 2, and and Zhanguo Wang1,2

  • 1. Institute of Semiconductors, Chinese Academy of Sciences; 
  • 2. University of Chinese Academy of Sciences; 

Corresponding Author: Fengqi Liu, fqliu@semi.ac.cn;  Shenqiang Zhai,  zsqlzsmbj@semi.ac.cn

Abstract: Quantum cascade laser (QCL) enduring high temperature continuous-wave (CW) operation is of paramount importance to address their application in gas sensing. We report on the realization of lattice-matched InGaAs/InAlAs/InP QCL materials grown by metal-organic chemical vapor deposition (MOCVD). High-quality interface structure designed for light emission at 8.5 μm was achieved by optimizing and precise controlling of growth conditions. A CW output power of 1.04 W at 288 K was obtained from a 4 mm-long and 10 μm-wide coated laser. Corresponding maximum wall-plug efficiency and threshold current density were 7.1% and 1.18 kA/cm2. The device can operate in CW mode up to 408 K with an output power of 160 mW, which demonstrates excellent temperature stability.

Key words: Quantum cascade laser; Metal-organic chemical vapor deposition; Continuous-wave; Interface roughness


Cite as: JOSarXiv.202109.0001


Recommended references: Teng Fei, Shenqiang Zhai, Jinchuan Zhang, Ning Zhuo, Junqi Liu, Lijun Wang, Shuman Liu, Zhiwei Jia, Kun Li, Yongqiang Sun, Kai Guo, Fengqi Liu, and Zhanguo Wang . (2021). High power \lambda ~ 8.5 μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K. [JOSarXiv.202109.0001]   (Copy)

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[V1] 2021-09-07 05:13:16 JOSarXiv.202109.0001V1Download

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Manuscript received: 07 September 2021

Manuscript published: 24 September 2021

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