arXiv List
  • An E-Band CMOS Frequency Quadrupler with 1.7-dBm Output Power and 45-dB Fundamental Suppression

    Xiaofei Liao, Dixian Zhao, Xiaohu You

    JOSarXiv.202204.0003     (Submitted on 2022-05-07)

    Abstract(17) PDF ( 0 )

    This paper presents an E-band frequency quadrupler in 40-nm CMOS technology. The circuit employs two push-push frequency doublers and two single-stage neutralized amplifiers. The pseudo-differential class-B biased cascode topology is adopted for the frequency doubler, which improves the reverse isolation and the conversion gain. Neutralization technique is applied to increase the stability and the power gain of the amplifiers simultaneously. The stacked transformers are used for single-ended-to-differential transformation as well as output bandpass filtering. The output bandpass filter enhances the 4th-harmonic output power, while rejecting the undesired harmonics, especially the 2th harmonic. The core chip is 0.23 mm2 in size and consumes 34 mW. The measured 4th harmonic achieves a maximum output power of 1.7 dBm with a peak conversion gain of 3.4 dB at 76 GHz. The fundamental and 2nd-harmonic suppressions of over 45 dB and 20 dB are achieved for the spectrum from 74 to 82 GHz, respectively.

  • Anisotropic Mechanical, Optical and Electric Transport Properties of Monolayer TiNI

    Shujuan Li, Min Li, Chenggong Zhang, Kunyue Shi, Peiji Wang

    JOSarXiv.202204.0004     (Submitted on 2022-05-07)

    Abstract(18) PDF ( 0 )

    Two-dimensional materials with anisotropy have always been sought by researchers. In this paper, we report a stable two-dimensional TiNI monolayers with anisotropic mechanical, optical and electrical transmission properties. Using non-equilibrium Green's function combined with density functional theory, we find that two-dimensional TiNI has mechanical, optical and electron transport properties dependent on lattice orientation. Moreover, the maximum Young's modulus of the single-layer TiNI can reach can reach 160 N·m-1. The calculation of electrical transport properties also shows that TiNI monolayer has anisotropic electron transport performance, and two-dimensional TiNI tends to transmit current along the direction b, and the intensity of its electron transport is about 6 times that of the transmission along the direction a. The anisotropic mechanical and optical properties, adjustable band gap and unique electron transport characteristics make two-dimensional TiNI potentially valuable in the field of nano-optoelectronics.

  • High precision temperature sensor based on FinFET device structure

    MO Xiao, KONG Dexin,LI Dong,LU Tengteng

    JOSarXiv.202205.0001     (Submitted on 2022-05-07)

    Abstract(47) PDF ( 0 )

    With the advancement of the standard CMOS process below 20nm, the planar CMOS transistor began to transition to the three-dimensional (3D) FinFET device structure, and the current gain of the parasitic transistor decreased significantly. The temperature sensing circuit with the parasitic PNP tube as the temperature sensing device is no longer applicable. Based on the standard CMOS process and using vertical NPN transistor as temperature sensor, this paper gives the design of a temperature sensor based on 3D FinFET device structure. In the temperature range of - 55 ℃ to + 125 ℃, the digital temperature sensor IP has the circuit simulation accuracy of ± 0.2℃ and the chip test accuracy of ± 0.3℃.

  • MODULATION OF THE SOLID REACTION BETWEEN NICKEL AND (100) GE SUBSTRATES BY AN ULTRATHIN ALUMINUM LAYER

    Huajun Ding,Zhongying Xue,Xing Wei

    JOSarXiv.202203.0001     (Submitted on 2022-03-15)

    Abstract(99) PDF (12)

    In this paper, the thermal stability of NiGe films formed on (100) Ge substrates was improved from 450 to 600°C by adding an ultrathin Al layer to the Ni deposition process. The improvement is due to the formation of Ni-Ge-Al hybrid layer on the NiGe surface, which acts as a capping layer to suppress the NiGe film from agglomerating at high temperatures. The sheet resistivity of NiGe is slightly reduced by the Al incorporation, making this method promising for S/D contact of Ge MOSFETs

  • Fully-integrated multipurpose microwave frequency identification system on a single chip

    Yuhan Yao, Yuhe Zhao, Yanxian Wei, Feng Zhou, Daigao Chen, Yuguang Zhang, Xi Xiao, Ming Li, Jianji Dong, Shaohua Yu, Xinliang Zhang

    JOSarXiv.202202.0002     (Submitted on 2022-02-18)

    Abstract(167) PDF (25)

    We demonstrate a fully-integrated multipurpose microwave frequency identification system on silicon-on-insulator platform. Thanks to the multipurpose features, the chip is able to identify different types of microwave signals, including single-frequency, multiple-frequency, chirped and frequency-hopping microwave signals, as well as discriminate instantaneous frequency variation among the frequency-modulated signals. This demonstration exhibits fully integrated solution and fully functional microwave frequency identification, which can meet the requirements in reduction of size, weight and power for future advanced microwave photonic processor.

  • A cross-coupled interlocked-storage-cells-based quadruple-node upsets self-recoverable latch design

    Zhou Jing, Xu Hui

    JOSarXiv.202112.0004     (Submitted on 2022-02-18)

    Abstract(114) PDF (13)

    With the shrinking technology size, CMOS circuits’ immunity to the space radiation environment decreases. As a result, when these deep submicron devices are used in memory cells in space environments, single-event upsets (SEUs), also known as soft errors, can cause permanent damage to devices. This paper proposed a latch design that can be self-recoverable from any possible quadruplenode upsets (QNUs). The latch includes four double interlocking modules, each of which comprises four interlocking units and has double-node upset (DNU) self-recovery ability. The simulation results show that the quadruple-node upset self-recoverable latch (QNUSRL) proposed in this paper has some advantages over the latest multi-node upsets (MNUs) tolerance latches. Compared with QNURL, the delay and area are reduced by 30.69%, 12.95%, respectively. The process, voltage, and temperature variation analysis show that the proposed QNUSRL latch is less sensitive to changes.

  • Method for improving endurance and breakdown characteristics of metal/ferroelectric/metal capacitor by modulating deposition cycle ratio

    Denghuai Tian1, 2, Hao Xu1, †, Jiahui Duan1, Yanrong Wang2, Jinjuan Xiang1, Xiaolei Wang1, Jing Zhang2

    JOSarXiv.202201.0002     (Submitted on 2022-01-18)

    Abstract(138) PDF (23)

    Hafnium-based ferroelectric devices show great potential in the application of high-efficiency memory technology. In this work, we study the effect of modulating deposition cycle ratio on memory windows and endurance of metal/ferroelectric/metal (MFM) capacitors. We fabricated capacitors with 3 conditions for Hf0.5Zr0.5O2 thin film of the deposition cycle ratio are 1:1, 5:5, 10:10, respectively. All samples have nearly the same memory window and the devices with a 10:10 cycle ratio could tolerate more bipolar cycles. By comparing the leakage and breakdown characteristics, the improved endurance for the 10:10 device is due to the lower trap density of oxygen vacancy. Furthermore, the deposition cycle ratio can be further optimized to make the trade-off between the performance and reliability in the ferroelectric devices.

  • Ultra low dark count InGaAsInP Single photon avalanche diodee

    Bin Li, Yuxiu Niu, Yinde Feng, Xiaomei Chen

    JOSarXiv.202112.0005     (Submitted on 2022-01-07)

    Abstract(135) PDF (23)

    A low noise InGaAs/InP single photon avalanche diode is demonstrated. The device is based on planar type separate absorption, grading, charge and multiplication structure. Relying on reasonably designed device structure and low-damage Zn diffusion technology, excellent low-noise performance is achieved. Due to its importance, the physical mechanism of dark count is analyzed through performance characterization at different temperatures. The device can achieve 20% single photon detection efficiency and 3.2E-7/ns dark count rate with a low after pulsing probability of 0.57% at 233K. This is, to the best of our knowledge, the lowest DCR reported at the same condition.

  • Miniaturized InGaAsInP Single photon avalanche diode with integrated thermoelectric cooler

    Xiaomei Chen, Bin Li, Yuxiu Niu

    JOSarXiv.202112.0006     (Submitted on 2022-01-07)

    Abstract(103) PDF (8)

    A miniaturized InGaAs/InP single photon avalanche diode device with integrated thermoelectric cooler is demonstrated. A planar type separate absorption, grading, charge and multiplication structure InGaAs/InP single photon avalanche diode chip is made of Zn diffusion. By integrating the chip, a thermoelectric cooler and a thermistor into a 8-pin butterfly case, the device can cool the chip to - 40℃ at an ambient temperature of 50℃. It can achieve 21.1% single photon detection efficiency, 1.04kHz dark count rate and 1.32% after pulsing probability when the chip is cooled to - 40℃ by the integrated TEC.

  • DASP: Defect and Dopant ab-initio Simulation Package

    Menglin Huang, Zhengneng Zheng, Zhenxing Dai, Xinjing Guo, Shanshan Wang, Lilai Jiang, Jinchen Wei, Shiyou Chen

    JOSarXiv.202201.0001     (Submitted on 2022-01-07)

    Abstract(244) PDF (30)

    In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, Defect and Dopant ab-initio Simulation Package (DASP), which is composed of four modules for calculating: (i) elemental chemical potentials, (ii) defect (dopant) formation energies and transition energy levels, (iii) defect and carrier densities and (iv) carrier dynamics properties of high-density defects. DASP uses the materials genome database for quick determination of competing secondary phases and calculation of the energy above convex hull when calculating the elemental chemical potential that stabilizes compound semiconductors, so it can perform high-throughput prediction of thermodynamic stability of multinary compounds. DASP calls the ab-initio softwares to perform the total energy, structural relaxation and electronic structure calculations of the defect supercells with different structure configurations and charge states, based on which the defect formation energies and transition energy levels are calculated and the corrections for electrostatic potential alignment and image charge interaction can be included. Then DASP can calculate the equilibrium densities of defects and electron and hole carriers as well as the Fermi level in semiconductors under different chemical potential conditions and different growth/working temperature. For high-density defects, DASP can calculate the carrier dynamics properties such as the photoluminescence (PL) spectrum, defect-related radiative and non-radiative carrier capture cross sections, and recombination lifetime of non-equilibrium carriers. DASP is expected to act as an automatic and reliable toolbox for calculating the defect and dopant properties, which can be compared to or used to interpret the experimental characterization results of defects using electrical and optical techniques such as PL and deep level transient spectroscopy (DLTS). Here we will introduce its unique functions including the maximumly-cubic supercell generation, distorted defect structure searching and wavefunction initialization which can reduce computational cost and improve accuracy, and also show three examples about its applications in undoped GaN, C-doped GaN and quasi-one-dimensional SbSeI.

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