Gate all around field effect transistors (GAA-FET) are treated as best potentials for 3nm and beyond technology nodes attributed to their better short channel effect (SCE) suppression ability caused by surrounding gate structure. They have been put forth recently to replace Fin field effect transistor (FinFET), which had dominated the semiconductor market from 22nm to 5nm technology nodes. The device performance can be significantly impacted by device structure. Herein, we checked the scaling performance of the Si nanowire GAA-FET with a HfO2 thickness of 1nm, S/D doping concentration n of 1×10 20 /cm 3 , channel doping concentration of 1×1017 /cm 3 , animproved I on , degraded I off and SS with shrinking of the gate length (L g ) had been observed. On the other hand, an intensive study of the parameters variation impact on the device performance of Si nanowire GAA-FETs, including high k thickness, T ox ; nanowire radius, r, and source/drain doping concentration, n, had been conducted, the relation of SCE with respect to the parameters mentioned above had been sufficiently studied as well. It will be more promising if the super gate electrostatic control ability of GAA-FET structure is combined with ultra-steep behavior (brought about by negative capacitance effect, or tunnel effect and so on) to overcome the degraded SCEs and large power consumption dissipation problems
Simulation study of Si Nanowire Gate all Around Field Effect Transistor
Laixiang Qin, Chunlai Li, Yiqun Wei, Yandong He, Guoqing Hu, Jin he
JOSarXiv.202303.0004 (Submitted on 2023-03-10)
Abstract(156) PDF (37)
Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/βGa2O3:N/GaN p-i-n Heterojunction Fabricated by a Reversed Substitution Growth Method
Yurui Han,1 Yuefei Wang,1 Danyang Xia,1 Shihao Fu,1 Chong Gao,1Jiangang Ma,1Haiyang Xu,1 Bingsheng Li,1,* Aidong Shen,2 Yichun Liu1
JOSarXiv.202303.0003 (Submitted on 2023-03-08)
Abstract(135) PDF (40)
We report a high-detectivity solar-blind deep UV photodetector with a fast response speed, based on a nitrogen-doped graphene/βGa2O3/GaN p-i-n heterojunction, in which the i layer of βGa2O3 was obtained by reversed substitution growth with oxygen replacing nitrogen in the GaN matrix. XPS demonstrated the Fermi level of βGa2O3 to be 0.2 eV lower than the central level of the forbidden band, indicating that the dominant carriers are holes. XRD shows that the transformation of GaN into (-201) preferred-orientation βGa2O3 occurs above 900 oC in an oxygen ambient. The heterojunction shows enhanced self-powered solar blind detection ability with a response time of 3.2 μs (rise)/0.02 ms (delay) and a detectivity exceeding 1012 Jones. Under a bias of -5 V, the photoresponsivity is 8.3 A/W with a high Ilight/Idark ratio of over 106and a detectivity of ~9 × 1014Jones. The excellent performance of the device is attributed to two factors. Firstly, its continuous conduction band without a potential energy barrier, and the larger built-in potential in the heterojunction because Fermi energy level shifts downward in βGa2O3. Secondly, an enhanced built-in electric field in the βGa2O3 due to introducing p-type graphene with a high hole concentration of up to ~1020 cm−3.
Investigation of the Phonon, Optical, and Thermoelectric Properties of Carbon-based Half Heusler Alloys for solar cell applications
O. E. Osafile , R. Ocaya
JOSarXiv.202303.0002 (Submitted on 2023-03-03)
Abstract(34) PDF (2)
Viable solar energy materials for solar cell application are on the front burner for researchers in material science due to the world energy crisis. We investigated the structural, electronic, phonon, and transport properties of ScAgC half Heusler alloy using the density functional theory based on the Purdue-Burke-Enzerhof generalized gradient approximation and HSE hybrid exchange-correlation functional implemented in quantum espresso. The band gap, lattice constant, and other structural and electronic property results obtained compare well with results from previous work. The hole and electron doping and carrier concentrations suggest that ScAgC is a better thermoelectric material and an n-type semiconductor. The optical properties show a high absorption coefficient, which increased from 7 × 104 cm−1 to 39 × 104 cm−1 through the visible light region. The high reflectivity exceeds 30% in the visible region and supports the use of ScAgC alloy in optoelectronic applications, solar and photovoltaic cells. The plasmon frequency for ScAgC alloy is 14.49 eV supporting its application as a solar cell material. The alloy is stable at low/medium temperatures but unstable at high temperatures. The clear wide phonon band gap between the acoustic and optical branches supports a strong ionic bonding that suggests the material is rigid.
β-Ga2O3 thick films epitaxy on c-plane sapphire substrate by carbothermal reduction rapid growth method
Liyuan CHENG, Hezhi ZHANG, Wenhui ZHANG, Hongwei LIANG
JOSarXiv.202303.0001 (Submitted on 2023-03-02)
Abstract(163) PDF (39)
We investigated the influence of the growth temperature, O2 flow, molar ratio between Ga2O3 powder and graphite powder on the structure and morphology of the films grown on the c-plane sapphire (0001) substrates by carbothermal reduction method. Experimental results for the heteroepitaxial growth of β-Ga2O3 illustrate that β-Ga2O3 growth by carbothermal reduction method can be controlled. The optimal result was obtained at a growth temperature of 1050°C. The fastest growth rate of β-Ga2O3 films was produced when the O2 flow was 20 sccm. To guarantee that β-Ga2O3 films with both high-quality crystal and morphology properties, the ideal molar ratio between graphite powder and Ga2O3 powder should be set at 10:1.
The parabolic-Gaussian potential effects on the polaron levels in Alkali halogen ionic crystal quantum wells
Yong Sun*, Shuang Han, Wei Zhang, Ran An, Xin-Jun Ma, Pei-Fang Li and Jing-Lin Xiao
JOSarXiv.202301.0001 (Submitted on 2023-01-30)
Abstract(89) PDF (7)
In this current study, we theoretically study how anisotropic parabolic potential affects polaron n excited state in strongly coupled polar crystals (KBr, KCl, RbCl) in asymmetric Gaussian potential quantum wells, through the combined approach of one unitary transformation and linear combination operator. In the restriction limit of strong coupling, we derive rigorous results for excited state energy. By using this combination method, polaron energy and electron energy are compared which energy both polaron and electron is affected by confined potential. In addition, the relationship between energy difference and coupling strength is also discussed. It is hoped that the theoretical results reveal a promising and importance of further study of polaron.
Evaluating some physical properties for a thin film of iron oxide
Montasir Salman Elfadel E-mail: email@example.com, ORCID ID https://orcid.org/0000-0002-9390-824X
JOSarXiv.202211.0001 (Submitted on 2022-12-08)
Abstract(64) PDF (8)
In this manuscript, some physical properties for a thin film of iron oxide were found, and one of the most important observations that were discovered was finding a large value of the optical conductivity of this sample, which confirms that this large value indicates that there is a very high optical response to the thin film. The increase in the optical conductivity is due to the higher photon energies which indicate the higher absorption of the thin iron oxide film, which may be caused by the electron excitation at wavelengths as shown in Figures (7) and (8) in this manuscript.
A high-speed avalanche photodiode
Li Bin(李彬), Yang Xiaohong(杨晓红), Yin Weihong(尹伟红), Lü Qianqian(吕倩倩), Cui Rong(崔荣), and Han Qin(韩勤)
JOSarXiv.202112.0006 (Submitted on 2022-11-08)
Abstract(224) PDF (18)
High-speed avalanche photodiodes are widely used in optical communication systems. Nowadays, separate absorption charge and multiplication structure is widely adopted. In this article, a structure with higher speed than separate absorption charge and multiplication structure is reported. Besides the traditional absorption layer, charge layer and multiplication layer, this structure introduces an additional charge layer and transit layer and thus can be referred to as separate absorption, charge, multiplication, charge and transit structure. The introduction of the new charge layer and transit layer brings additional freedom in device structure design. The benefit of this structure is that the carrier transit time and device capacitance can be reduced independently, thus the 3 dB bandwidth could be improved by more than 50% in contrast to the separate absorption charge and multiplication structure with the same size.
Spectral Shaping with Integrated Self-Coupled Sagnac Loop Reflectors
JOSarXiv.202210.0002 (Submitted on 2022-10-18)
Abstract(116) PDF (15)
We propose and theoretically investigate integrated photonic filters based on coupled Sagnac loop reflectors (SLRs) formed by a self-coupled wire waveguide. By tailoring coherent mode interference in the device, three different filter functions are achieved, including Fano-like resonances, wavelength interleaving, and varied resonance mode splitting. For each function, the impact of device structural parameters is analyzed to facilitate optimized performance. Our results theoretically verify the proposed device as a compact multi-functional integrated photonic filter for flexible spectral shaping.
Transforming silicon into a high performance nonlinear optical platform through the integration of 2D graphene oxide thin films
JOSarXiv.202210.0001 (Submitted on 2022-10-18)
Abstract(75) PDF (4)
Layered two-dimensional (2D) GO films are integrated with silicon-on-insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through self-phase modulation (SPM). The GO films are integrated with SOI nanowires using a large-area, transfer-free, layer-by-layer coating method that yields precise control of the film thickness. The film placement and coating length are controlled by opening windows in the silica cladding of the SOI nanowires. Owing to the strong mode overlap between the SOI nanowires and the highly nonlinear GO films, the Kerr nonlinearity of the hybrid waveguides is significantly enhanced. Detailed SPM measurements using picosecond optical pulses show significant spectral broadening enhancement for SOI nanowires coated with 2.2-mm-long films of 1−3 layers of GO, and 0.4-mm-long films with 5−20 layers of GO. By fitting the experimental results with theory, the dependence of GO’s n2 on layer number and pulse energy is obtained, showing interesting physical insights and trends of the layered GO films from 2D monolayers to quasi bulk-like behavior. Finally, we show that by coating SOI nanowires with GO films the effective nonlinear parameter of SOI nanowires is increased 16 fold, with the effective nonlinear figure of merit (FOM) increasing by about 20 times to FOM > 5. These results reveal the strong potential of using layered GO films to improve the Kerr nonlinear optical performance of silicon photonic devices.
High bandwidth highly reconfigurable photonic RF Hilbert transformers using Kerr micro-combs
JOSarXiv.202206.0005 (Submitted on 2022-06-20)
Abstract(143) PDF (14)
We experimentally demonstrate bandwidth-tunable RF photonic Hilbert transformer based on an integrated Kerr micro-comb source. The micro-comb is generated by an integrated micro-ring resonator with a free spectral range of 48.9 GHz, yielding 75 micro-comb lines in the telecom C-band. By programming and shaping the generated comb lines according to calculated tap weights, we demonstrate high-speed Hilbert transform functions with tunable bandwidths ranging from 1.2 GHz to 15.3 GHz, switchable center frequencies from baseband to 9.5 GHz, and arbitrary fractional orders. The experimental results show good agreement with theory and confirm the effectiveness of our approach.
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