High growth-rate synthesis is the characteristic feature of the horizontal gradient freezing technique by Bridgman for growth of single crystal such as InP, but the relevant growth is more exposed to Si contamination due the requirement of temperature higher than the melting point at the synthesize zone, therefore, the modified Bridgman methods HGF, and VGF that realizes by reducing the temperature of the growth region was developed which are the main topics discussed in this paper. Another improvement that presented is related by using pBN crucibles instead of using of quartz boat during the growth can degrading the Si contamination.

Nuclear batteries have attracted many attentions because of their long lifetime. Due to the large band gap and high radiation tolerance, diamond is an ideal material for the fabrication of the energy converter for nuclear batteries. In this work, a diamond Schottky barrier diode energy converter was prepared, and the performance of the device was studied by electron-beam induced current (EBIC) method. The energy converter can work under an electron beam irradiation with a beam current of μA order. The open-circuit voltage of the device is around 0.8 V, and a short-circuit current of several mA can be achieved. The maximum energy conversion efficiency of 3.19% is obtained under the beam current of 0.2 μA at 26 keV.

In this polishing experiment, the polishing effects of different crystal facets (Ga-face and N-face) of single-crystal gallium nitride (GaN) during the process of Photo-Catalyzed Chemical Mechanical Polishing (PACMP) were investigated by combining photocatalysis with chemical mechanical polishing (CMP). Furthermore, the influence mechanisms of polishing effects on different crystal facets were analyzed. Additionally, a comparison was made among three polishing methods: polishing without light, polishing with light polishing pad, and polishing with light polishing slurry. Various factors, such as TiO2 concentration, pH value, H2O2 concentration, polishing pressure, polishing pad rotational speed, and polishing slurry flow rate, were also studied to determine their impact on the polishing effects of GaN crystals on different facets. The process parameters were optimized accordingly.The experiments demonstrated that under the conditions of Photo-Catalyzed Chemical Mechanical Polishing with ultraviolet light assistance, the material removal rate (MRR) of Ga-face of GaN crystals can reach 698.864 nm/h, with a surface roughness (Ra) value of 0.430 nm and a root mean square height (Sq) of 0.842 nm. The MRR of N-face of GaN crystals can reach 619.435 nm/h, with an Ra value of 0.725 nm and an Sq of 1.162 nm. The composite polishing method of ultraviolet light-assisted CMP can achieve sub-nanometer-level super-smooth GaN crystal surfaces. Among them, the light polishing slurry method significantly improves the polishing efficiency and facilitates the rapid removal of Ga2O3 on the GaN surface.

Gate all around field effect transistors (GAA-FET) are treated as best potentials for 3nm and beyond technology nodes attributed to their better short channel effect (SCE) suppression ability caused by surrounding gate structure. They have been put forth recently to replace Fin field effect transistor (FinFET), which had dominated the semiconductor market from 22nm to 5nm technology nodes. The device performance can be significantly impacted by device structure. Herein, we checked the scaling performance of the Si nanowire GAA-FET with a HfO2 thickness of 1nm, S/D doping concentration n of 1×10 20 /cm 3 , channel doping concentration of 1×1017 /cm 3 , animproved I on , degraded I off and SS with shrinking of the gate length (L g ) had been observed. On the other hand, an intensive study of the parameters variation impact on the device performance of Si nanowire GAA-FETs, including high k thickness, T ox ; nanowire radius, r, and source/drain doping concentration, n, had been conducted, the relation of SCE with respect to the parameters mentioned above had been sufficiently studied as well. It will be more promising if the super gate electrostatic control ability of GAA-FET structure is combined with ultra-steep behavior (brought about by negative capacitance effect, or tunnel effect and so on) to overcome the degraded SCEs and large power consumption dissipation problems

We report a high-detectivity solar-blind deep UV photodetector with a fast response speed, based on a nitrogen-doped graphene/βGa2O3/GaN p-i-n heterojunction, in which the i layer of βGa2O3 was obtained by reversed substitution growth with oxygen replacing nitrogen in the GaN matrix. XPS demonstrated the Fermi level of βGa2O3 to be 0.2 eV lower than the central level of the forbidden band, indicating that the dominant carriers are holes. XRD shows that the transformation of GaN into (-201) preferred-orientation βGa2O3 occurs above 900 oC in an oxygen ambient. The heterojunction shows enhanced self-powered solar blind detection ability with a response time of 3.2 μs (rise)/0.02 ms (delay) and a detectivity exceeding 1012 Jones. Under a bias of -5 V, the photoresponsivity is 8.3 A/W with a high Ilight/Idark ratio of over 106and a detectivity of ~9 × 1014Jones. The excellent performance of the device is attributed to two factors. Firstly, its continuous conduction band without a potential energy barrier, and the larger built-in potential in the heterojunction because Fermi energy level shifts downward in βGa2O3. Secondly, an enhanced built-in electric field in the βGa2O3 due to introducing p-type graphene with a high hole concentration of up to ~1020 cm−3.

Viable solar energy materials for solar cell application are on the front burner for researchers in material science due to the world energy crisis. We investigated the structural, electronic, phonon, and transport properties of ScAgC half Heusler alloy using the density functional theory based on the Purdue-Burke-Enzerhof generalized gradient approximation and HSE hybrid exchange-correlation functional implemented in quantum espresso. The band gap, lattice constant, and other structural and electronic property results obtained compare well with results from previous work. The hole and electron doping and carrier concentrations suggest that ScAgC is a better thermoelectric material and an n-type semiconductor. The optical properties show a high absorption coefficient, which increased from 7 × 104 cm−1 to 39 × 104 cm−1 through the visible light region. The high reflectivity exceeds 30% in the visible region and supports the use of ScAgC alloy in optoelectronic applications, solar and photovoltaic cells. The plasmon frequency for ScAgC alloy is 14.49 eV supporting its application as a solar cell material. The alloy is stable at low/medium temperatures but unstable at high temperatures. The clear wide phonon band gap between the acoustic and optical branches supports a strong ionic bonding that suggests the material is rigid.

We investigated the influence of the growth temperature, O₂ flow, molar ratio between Ga₂O₃ powder and graphite powder on the structure and morphology of the films grown on the c-plane sapphire (0001) substrates by carbothermal reduction method. Experimental results for the heteroepitaxial growth of β-Ga₂O₃ illustrate that β-Ga₂O₃ growth by carbothermal reduction method can be controlled. The optimal result was obtained at a growth temperature of 1050°C. The fastest growth rate of β-Ga₂O₃ films was produced when the O₂ flow was 20 sccm. To guarantee that β-Ga₂O₃ films with both high-quality crystal and morphology properties, the ideal molar ratio between graphite powder and Ga₂O₃ powder should be set at 10:1.

In this current study, we theoretically study how anisotropic parabolic potential affects polaron n excited state in strongly coupled polar crystals (KBr, KCl, RbCl) in asymmetric Gaussian potential quantum wells, through the combined approach of one unitary transformation and linear combination operator. In the restriction limit of strong coupling, we derive rigorous results for excited state energy. By using this combination method, polaron energy and electron energy are compared which energy both polaron and electron is affected by confined potential. In addition, the relationship between energy difference and coupling strength is also discussed. It is hoped that the theoretical results reveal a promising and importance of further study of polaron.

In this manuscript, some physical properties for a thin film of iron oxide were found, and one of the most important observations that were discovered was finding a large value of the optical conductivity of this sample, which confirms that this large value indicates that there is a very high optical response to the thin film. The increase in the optical conductivity is due to the higher photon energies which indicate the higher absorption of the thin iron oxide film, which may be caused by the electron excitation at wavelengths as shown in Figures (7) and (8) in this manuscript.

High-speed avalanche photodiodes are widely used in optical communication systems. Nowadays, separate absorption charge and multiplication structure is widely adopted. In this article, a structure with higher speed than separate absorption charge and multiplication structure is reported. Besides the traditional absorption layer, charge layer and multiplication layer, this structure introduces an additional charge layer and transit layer and thus can be referred to as separate absorption, charge, multiplication, charge and transit structure. The introduction of the new charge layer and transit layer brings additional freedom in device structure design. The benefit of this structure is that the carrier transit time and device capacitance can be reduced independently, thus the 3 dB bandwidth could be improved by more than 50% in contrast to the separate absorption charge and multiplication structure with the same size.