arXiv List
  • High power \lambda ~ 8.5 μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K

    Teng Fei, Shenqiang Zhai, Jinchuan Zhang, Ning Zhuo, Junqi Liu, Lijun Wang, Shuman Liu, Zhiwei Jia, Kun Li, Yongqiang Sun, Kai Guo, Fengqi Liu, and Zhanguo Wang

    JOSarXiv.202109.0001     (Submitted on 2021-09-24)

    Abstract(194) PDF (80)

    Quantum cascade laser (QCL) enduring high temperature continuous-wave (CW) operation is of paramount importance to address their application in gas sensing. We report on the realization of lattice-matched InGaAs/InAlAs/InP QCL materials grown by metal-organic chemical vapor deposition (MOCVD). High-quality interface structure designed for light emission at 8.5 μm was achieved by optimizing and precise controlling of growth conditions. A CW output power of 1.04 W at 288 K was obtained from a 4 mm-long and 10 μm-wide coated laser. Corresponding maximum wall-plug efficiency and threshold current density were 7.1% and 1.18 kA/cm2. The device can operate in CW mode up to 408 K with an output power of 160 mW, which demonstrates excellent temperature stability.

  • Fabricated and characterize a conductive polymeric composite constituted from Nano Metals Graphene assembled in polymeric Matrix

    Ameen Abdelrahman, Fouad Erchiqui, Nedil Mourad

    JOSarXiv.202107.0001     (Submitted on 2021-09-24)

    Abstract(260) PDF (18)

    Our work aims to make a unique polymer to be used as a conductive and flexible chip antenna. Its properties are robustness, rigidity, stretchability, and good conduction. The fabricated composite is composed of two copolymers, Polydimethylsiloxane (PDMS) and Polyethylenimine (PEI), assembled with nano metals (Copper, Silver ), and graphene nanoparticles as a matrix. Nano metals fill out the inter-layer space, and polymer voids reinforce the cross linker. Graphene/metal nanoparticles help make chelating complexes using metallic bonds, enhancing the polymer’s conductivity from 1.87 × 10-4 to 5.64 ×10-6 σ Scm-1. We analyze the conductivity, self-healing, and surface morphology of fabricated composite using different spectroscopic techniques, such as electrochemical impedance (EIS), Scanning Electronic Microscopy ( SEM), Transition Electronic Microscopy (TEM) , Infrared spectroscopy ( IR) , UV-Visible spectroscopy (UV), and a particle size analyzer.

  • yolov3模型在图形晶圆表面缺陷检测上的优化与应用

    肖安七, 吕肃, 张嵩

    JOSarXiv.202108.0001     (Submitted on 2021-08-16)

    Abstract(69) PDF (3)


  • Direct calculations on the band offsets of large-lattice-mismatched and heterovalent Si and III-V semiconductors

    Yu-Ying Hu, Chen Qiu, Tao Shen, Kaike Yang, Hui-Xiong Deng

    JOSarXiv.202105.0001     (Submitted on 2021-05-21)

    Abstract(204) PDF (36)

    Band offset in semiconductors is a fundamental physical quantity that determines the performance of optoelectronic devices. However, the current method of calculating band offset is difficult to be applied directly to the large-lattice-mismatched and heterovalent semiconductors because of existing electric field and large strain at the interfaces. Here, we proposed a modified method to calculate band offsets for such systems, in which the core energy level shifts caused by heterovalent effects and lattice mismatch are estimated by interface reconstruction and insertion of unidirectional strain structures as transitions, respectively. Taking the Si and III-V systems as examples, the results have the same accuracy as widely used method for small-lattice-mismatched systems, and are much closer to the experimental values for the large-lattice-mismatched and heterovalent systems. Furthermore, by systematically studying the heterojunctions of Si and III-V semiconductors along different directions, it is found that the band offsets of Si/InAs and Si/InSb systems in [100], [110] and [111] directions belong to the type I, and could be beneficial for silicon-based luminescence performance. Our study offers a more reliable and direct method for calculating band offsets of large-lattice-mismatched and heterovalent semiconductors, and could provide theoretical support for the design of the high-performance silicon-based light sources.

  • Integrated 2D graphene oxide films for applications to ultra-flat optics and nonlinear integrated photonic chips

    David Moss

    JOSarXiv.202104.0003     (Submitted on 2021-05-13)

    Abstract(116) PDF (9)

    With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of two-dimensional (2D) materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences. This paper presents our recent advances in this emerging field, including the optical properties of GO as well as methods for the on-chip integration of GO. Our main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.

  • Design and Introduction of Thermal Collection Network (TCN) for the Thermal Management in 3-D IC Structures

    Mr.Chandrashekhar. V. Patil. and Dr.Suma. M. S.

    JOSarXiv.202103.0001     (Submitted on 2021-05-13)

    Abstract(123) PDF (6)

    Power in Watts of the chip, per unit area is growing exponentially in the electronic industry. At the same time, thermal problems becoming side effects of huge power consumption. Continuous efforts are getting made to remove the thermal problems of electronic packaging and systems. Thermal problems if not alleviated or suppressed, will lead the dielectric breakdown, electromigration, material creep, thermal cycling, chemical reactions, board warpage, performance drift, indirect heating, and many more problems. Likewise, a dedicated Power Delivery/distribution Network (PDN), can deliver the power to the chip base, this paper has introduced a new methodology of a dedicated Thermal Collection Network (TCN) in the same Back End Of Line (BEOL) area of the System in Package (SiP), System on Chip (SOC) and any other power-consuming chips. Adding a Thermal Through Silicon Via (TTSV) is another advantage in it. Using such an apparatus or methodology connected to TTSV will quickly pump-up the thermal energy to the heat-sink-fan assembly. Hence, preempting of heat from its sources can manage the thermal problems inside the chips or 3-D IC structures. The methodology uses the same copper metal stripes inside the Inter-Layer/Level-Dielectric (ILD), which will not lead to any extra copper to introduce more Coefficient of Thermal Efficiency (CTE) mismatch problems. It would be considered as one among the other metal stripes. The experimental results using the Finite Element Method (FEM) tool shown that 32% heat suction occurs in the TCNs, in monolithic ICs, and 11% in 3-D IC structures, compared to without such an approach. The junction temperature remained at 35%, with and without such an approach, in 3-D IC structures. This might lead to a new methodology for designing electronic chips and 3-D IC structures, in the future.

  • High bandwidth temporal RF photonic signal processing with Kerr micro-combs: integration, fractional differentiation and Hilbert transforms

    Mengxi Tan, Xingyuan Xu, Jiayang Wu, and David J. Moss

    JOSarXiv.202102.0001     (Submitted on 2021-05-13)

    Abstract(56) PDF (2)

    Integrated Kerr micro-combs, a powerful source of many wavelengths for photonic RF and microwave signal processing, are particularly useful for transversal filter systems. They have many advantages including a compact footprint, high versatility, large numbers of wavelengths, and wide bandwidths. We review recent progress on photonic RF and microwave high bandwidth temporal signal processing based on Kerr micro-combs with spacings from 49-200GHz. We cover integral and fractional Hilbert transforms, differentiators as well as integrators. The potential of optical micro-combs for RF photonic applications in functionality and ability to realize integrated solutions is also discussed.

  • 11 Tera-OPs photonic convolutional accelerator for optical neural networks

    Xingyuan Xu, Mengxi Tan, Bill Corcoran, Jiayang Wu, Andreas Boes, Thach G. Nguyen, Sai T. Chu, Brent E. Little, Damien G. Hicks, Roberto Morandotti, Arnan Mitchell, and David J. Moss

    JOSarXiv.202102.0002     (Submitted on 2021-02-24)

    Abstract(111) PDF (6)

    Convolutional neural networks (CNNs), inspired by biological visual cortex systems, are a powerful category of artificial neural networks that can extract the hierarchical features of raw data to greatly reduce the network parametric complexity and enhance the predicting accuracy. They are of significant interest for machine learning tasks such as computer vision, speech recognition, playing board games and medical diagnosis [1-7]. Optical neural networks offer the promise of dramatically accelerating computing speed to overcome the inherent bandwidth bottleneck of electronics. Here, we demonstrate a universal optical vector convolutional accelerator operating beyond 10 Tera-FLOPS (floating point operations per second), generating convolutions of images of 250,000 pixels with 8-bit resolution for 10 kernels simultaneously — enough for facial image recognition. We then use the same hardware to sequentially form a deep optical CNN with ten output neurons, achieving successful recognition of full 10 digits with 900 pixel handwritten digit images with 88% accuracy. Our results are based on simultaneously interleaving temporal, wavelength and spatial dimensions enabled by an integrated microcomb source. This approach is scalable and trainable to much more complex networks for demanding applications such as unmanned vehicle and real-time video recognition.

  • Phonon sidebands of the optical spectrum for the defect structure GaN: CN+ON

    Yao Xiao, Wen Xiong, Ziwu Wang

    JOSarXiv.202101.0002     (Submitted on 2021-01-26)

    Abstract(234) PDF (70)

    We investigate the multi-phonon sidebands of the optical spectra of point defects in GaN based on the Huang-Rhys model, in which the localized phonon modes and the reorganization energy associated with the defect structure GaN: CN+ON are precisely calculated by ab initio approach. We present multi-phonon sidebands for both the localized phonon modes and intrinsic longitudinal optical phonon modes and give the comparisons between them in detail. Meanwhile, different types of the combinational phonon sidebands that are consisted of two localized phonon modes with different proportions are proposed. These multi-phonon sidebands not only could be used for the analysis of fine structure of the optical spectra, but also served as the fingerprints for the defect structures.

  • Comparing 6T & 13T SRAM Bit Cell & using FinFET to construct the superior in 22nm Scale for usage in Spacecrafts

    Soumya Sen , Mandeep Singh

    JOSarXiv.202012.0001     (Submitted on 2021-01-25)

    Abstract(189) PDF (19)

    The soft error in SRAM is generated as the single ionizing particle strikes a sensitive node .This gives rise to Single Event Upsets (SEU) .Here in this paper we design and examine the 6T and 13T SRAMs and use FinFET in 22nm technology node in Microwind 3.8 and Tanner EDA Tool . A feedback which would be driven on dual mode would be added to the design, to combat the residual deposition of charges .

  • First
  • Prev
  • 1
  • 2
  • Last
  • Go