arXiv List
  • 11 Tera-OPs photonic convolutional accelerator for optical neural networks

    Xingyuan Xu, Mengxi Tan, Bill Corcoran, Jiayang Wu, Andreas Boes, Thach G. Nguyen, Sai T. Chu, Brent E. Little, Damien G. Hicks, Roberto Morandotti, Arnan Mitchell, and David J. Moss

    JOSarXiv.202102.0002     (Submitted on 2021-02-24)

    Abstract(8) PDF ( 0 )

    Convolutional neural networks (CNNs), inspired by biological visual cortex systems, are a powerful category of artificial neural networks that can extract the hierarchical features of raw data to greatly reduce the network parametric complexity and enhance the predicting accuracy. They are of significant interest for machine learning tasks such as computer vision, speech recognition, playing board games and medical diagnosis [1-7]. Optical neural networks offer the promise of dramatically accelerating computing speed to overcome the inherent bandwidth bottleneck of electronics. Here, we demonstrate a universal optical vector convolutional accelerator operating beyond 10 Tera-FLOPS (floating point operations per second), generating convolutions of images of 250,000 pixels with 8-bit resolution for 10 kernels simultaneously — enough for facial image recognition. We then use the same hardware to sequentially form a deep optical CNN with ten output neurons, achieving successful recognition of full 10 digits with 900 pixel handwritten digit images with 88% accuracy. Our results are based on simultaneously interleaving temporal, wavelength and spatial dimensions enabled by an integrated microcomb source. This approach is scalable and trainable to much more complex networks for demanding applications such as unmanned vehicle and real-time video recognition.

  • Phonon sidebands of the optical spectrum for the defect structure GaN: CN+ON

    Yao Xiao, Wen Xiong, Ziwu Wang

    JOSarXiv.202101.0002     (Submitted on 2021-01-26)

    Abstract(114) PDF (60)

    We investigate the multi-phonon sidebands of the optical spectra of point defects in GaN based on the Huang-Rhys model, in which the localized phonon modes and the reorganization energy associated with the defect structure GaN: CN+ON are precisely calculated by ab initio approach. We present multi-phonon sidebands for both the localized phonon modes and intrinsic longitudinal optical phonon modes and give the comparisons between them in detail. Meanwhile, different types of the combinational phonon sidebands that are consisted of two localized phonon modes with different proportions are proposed. These multi-phonon sidebands not only could be used for the analysis of fine structure of the optical spectra, but also served as the fingerprints for the defect structures.

  • Comparing 6T & 13T SRAM Bit Cell & using FinFET to construct the superior in 22nm Scale for usage in Spacecrafts

    Soumya Sen , Mandeep Singh

    JOSarXiv.202012.0001     (Submitted on 2021-01-25)

    Abstract(83) PDF (13)

    The soft error in SRAM is generated as the single ionizing particle strikes a sensitive node .This gives rise to Single Event Upsets (SEU) .Here in this paper we design and examine the 6T and 13T SRAMs and use FinFET in 22nm technology node in Microwind 3.8 and Tanner EDA Tool . A feedback which would be driven on dual mode would be added to the design, to combat the residual deposition of charges .

  • Photonic Radio Frequency Channelizers based on Kerr Micro-combs and Integrated Micro-ring Resonators

    Mengxi Tan, Xingyuan Xu, Jiayang Wu, Thach G. Nguyen, Sai T. Chu, Brent E. Little, Roberto Morandotti, Arnan Mitchell, and David J. Moss

    JOSarXiv.202010.0002     (Submitted on 2020-10-26)

    Abstract(120) PDF (33)

    We review recent work on broadband RF channelizers based on integrated optical frequency Kerr micro-combs combined with passive micro-ring resonator filters, with microcombs having channel spacings of 200GHz and 49GHz. This approach to realizing RF channelizers offers reduced complexity, size, and potential cost for a wide range of applications to microwave signal detection.

  • Orthogonally polarized RF optical single sideband generation with integrated ring resonators

    Mengxi Tan, Xingyuan Xu, Jiayang Wu, Thach G. Nguyen, Sai T. Chu, Brent E. Littl, Arnan Mitchell, Roberto Morandotti, and David J. Moss

    JOSarXiv.202010.0001     (Submitted on 2020-10-22)

    Abstract(1609) PDF (27)

    We review recent work on narrowband orthogonally polarized optical RF single sideband generators as well as dual-channel equalization, both based on high-Q integrated ring resonators. The devices operate in the optical telecommunications C-band and enable RF operation over a range of either fixed or thermally tuneable frequencies. They operate via TE/TM mode birefringence in the resonator. We achieve a very large dynamic tuning range of over 55 dB for both the optical carrier-to-sideband ratio and the dual-channel RF equalization for both the fixed and tunable devices.

  • Discovery of new polymorphs of gallium oxides with particle swarm optimization based structure searches

    Xue Wang, Muhammad Faizan, Guangren Na, Xin He, YuHao Fu, Lijun Zhang

    JOSarXiv.202004.0001     (Submitted on 2020-04-21)

    Abstract(256) PDF (5)

    Gallium Oxide (Ga2O3) has attracted significant research interest for next-generation high-efficiency power devices because of their unique electronic properties such as ultra-wide band gap, high breakdown electric field, and large Baliga's figure of merit. Ga2O3 crystallizes in a series of reported polymorphs including β-, α-, ε-, κ-, γ- and δ-Ga2O3, the structures of some of which are still in serious controversy. We herein performed a polymorph structure search study of Ga2O3 by combining particle swarm optimization with first-principles energetic calculations. In addition to producing the predominant experimental known phases of β-, α- and κ-Ga2O3, we found two new polymorphs with space group P-1 and Pmc21 consisting of four- and five-fold coordinated Ga. They show comparable energy with β- and α-Ga2O3 with the energy difference of several meV/atom, and exhibit robust phonon stability. Similarly, the new phases show quite wide band gaps and small electron effective masses by comparing it with other known phases. The Pmc21 phase shows a calculated spontaneous polarization of 0.277 C/m2, close to that of ε/κ-Ga2O3. Our systemic structure searches also establish a structural relationship between ε-Ga2O3 and κ-Ga2O3 and how the electronic properties vary with polymorphic phase change.

  • First-Principles Exploration of Defect-Pairs in GaN

    He Li, Menglin Huang and Shiyou Chen

    JOSarXiv.202003.0001     (Submitted on 2020-03-20)

    Abstract(202) PDF (16)

    Using first-principles calculations, we explored all the 21 defect-pairs in GaN and considered 6 configurations with different defect-defect distances for each defect-pair. 15 defect-pairs with short defect-defect distances are found to be stable during structural relaxation, so they can exist in the GaN lattice once formed during the irradiation of high-energy particles. 9 defect-pairs have formation energies lower than 10 eV in the neutral state. The vacancy-pair VN-VN is found to have very low formation energies, as low as 0 eV in p-type and Ga-rich GaN, and act as efficient donors producing two deep donor levels, which can limit the p-type doping and minority carrier lifetime in GaN. VN-VN has been overlooked in the previous study of defects in GaN. Most of these defect-pairs act as donors and produce a large number of defect levels in the band gap. Their formation energies and concentrations are sensitive to the chemical potentials of Ga and N, so their influences on the electrical and optical properties of Ga-rich and N-rich GaN after irradiation should differ significantly. These results about the defect-pairs provide fundamental data for understanding the radiation damage mechanism in GaN and simulating the defect formation and diffusion behavior under irradiation.

  • Inherent Resolution Limit on Nonlocal Wavelength-to-time Mapping with Entangled Photon Pairs

    Ye Yang, Xiao Xiang, Feiyan Hou, Runai Quan, Baihong Li, Wei Li, Ninghua Zhu, Tao Liu, Shougang Zhang, Ruifang Dong, and Ming Li

    JOSarXiv.201912.0001     (Submitted on 2020-01-02)

    Abstract(411) PDF (15)

    Nonlocal wavelength-to-time mapping between frequency entangled photon pairs generated with the process of spontaneous parametric down-conversion is theoretically analyzed and experimentally demonstrated. The spectral filtering pattern experienced by one photon in the photon pair will be non-locally mapped into the time domain when the other photon propagates inside a dispersion-compensation fiber with large group velocity dispersion. Our work, for the first time, points out that the spectral bandwidth of the pump laser will become the dominated factor preventing the improvement of the spectral resolution when the involved group velocity dispersion is large enough, which provides an excellent tool of characterizing the resolution of a nonlocal wavelength-to-time mapping for further quantum information applications.

  • Alloy fluctuating in hole mobility limiting the use of Si1-xGex channel for nanoscale PMOS

    Gang Wang, Juan Lv, Hongjuan Wang, Xiang-Wei Jiang*, Jun-Wei Luo*, and Shu-Shen Li

    JOSarXiv.202001.0001     (Submitted on 2020-01-02)

    Abstract(1232) PDF (18)

    The potential fluctuations from individual impurities in a MOSFET was recognized as being an important factor that degrades the nanoscale transistors, requiring to control the positioning of these impurities to improve the reproducibility and reliability. In this paper, we study the fluctuations in the hole mobility arising from the randomly placing of Si and Ge atoms within the SiGe channel, which is considering to replace the silicon channel in an attempt to boost the hole mobility due to Ge offering four times higher hole mobility than Si. We conclude that (i) the hole mobility fluctuates in a large range (as large as 100%) among distinct arrangements of Si and Ge atoms within the 9 nm scale SiGe channel, (ii) arising mainly from the switching of band order and admixture between heavy-hole and light-hole bands, (iii) that in turn causes fluctuations in off current Ioff and threshold voltage Vth, and makes reproducibility a challenge for SiGe to be a Si channel replacement for nanoscale PMOS.

  • High-speed photodetectors in optical communication system

    Zeping Zhao, Jianguo Liu, Yu Liu, Ninghua Zhu

    JOSarXiv.201912.0002     (Submitted on 2020-01-02)

    Abstract(519) PDF (9)

    This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetectors from development history, research hotspots to packaging technologies is provided to the best of our knowledge. A few typical applications based on photodetectors are also illustrated, such as free-space optical communications, radio over fiber and millimeter terahertz signal generation systems.

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