arXiv List
  • High bandwidth highly reconfigurable photonic RF Hilbert transformers using Kerr micro-combs

    David Moss

    JOSarXiv.202206.0005     (Submitted on 2022-06-20)

    Abstract(67) PDF (13)

    We experimentally demonstrate bandwidth-tunable RF photonic Hilbert transformer based on an integrated Kerr micro-comb source. The micro-comb is generated by an integrated micro-ring resonator with a free spectral range of 48.9 GHz, yielding 75 micro-comb lines in the telecom C-band. By programming and shaping the generated comb lines according to calculated tap weights, we demonstrate high-speed Hilbert transform functions with tunable bandwidths ranging from 1.2 GHz to 15.3 GHz, switchable center frequencies from baseband to 9.5 GHz, and arbitrary fractional orders. The experimental results show good agreement with theory and confirm the effectiveness of our approach.

  • Silicon nanophotonic circuits based on Sagnac loop reflectors for high performance optical spectral filters

    David Moss

    JOSarXiv.202206.0004     (Submitted on 2022-06-20)

    Abstract(108) PDF (27)

    We present and investigate theoretically photonic integrated filters based on 2 Sagnac coupled loop reflectors (SLRs) that are arranged in a self-coupled optical waveguide. We recently presented photonic integrated filters based on coupled and cascaded SLRs. In this paper, we advance this field by investigating a unique approach of employing coupled SLRs formed by self-coupled waveguides. This allows us to achieve high performance filter functions including Fano-like resonances and wavelength interleaving with a simpler design and a higher fabrication tolerance by tailoring coherent mode interference in the device. Our design takes into account the device fabrication issues as well as the requirements for practical applications. As a guide for practical device fabrication, an analysis of the impact of the structural parameters and fabrication tolerance on each filter function is also provided. The Fano-like resonances show a low insertion loss (IL) of 1.1 dB, a high extinction ratio of 30.2 dB, and a high slope rate (SR) of 747.64 dB/nm. The combination of low IL and high SR promises this device for Fano resonance applications. Our device also can achieve wavelength de-interleaving function with high fabrication tolerance which is advantageous for applications such as optical interleavers that require a symmetric flat-top filter shape. Optical de-interleavers and interleavers are key components for optical signal multiplexing and demultiplexing for wavelength division multiplexing optical communication systems. Versatile spectral responses with a simple design, compact device footprint, and high fabrication tolerance make this approach highly promising for flexible response shaping for many applications.

  • Graphene oxide films integrated with nanowires and ring resonators for nonlinear optics

    David Moss

    JOSarXiv.202206.0003     (Submitted on 2022-06-20)

    Abstract(81) PDF (13)

    We report enhanced nonlinear optics in nanowires, waveguides, and ring resonators by introducing layered two-dimensional (2D) graphene oxide (GO) films through experimental demonstration. The GO films are integrated on silicon-on-insulator nanowires (SOI), high index doped silica glass, and silicon nitride (SiN) waveguides and microring resonators (MRRs), to demonstrate an improved optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). By using a large-area, transfer-free, layer-by-layer GO coating method with photolithography and lift-off processes, we integrate GO films on these complementary metal-oxide-semiconductor (CMOS)-compatible devices. For SOI nanowires, significant spectral broadening of optical pulses in GO-coated SOI nanowires induced by self-phase modulation (SPM) is observed, achieving a high spectral broadening factor of 4.34 for a device with a patterned film including 10 layers of GO. A significant enhancement in the nonlinear figure of merit (FOM) for silicon nanowires by a factor of 20 is also achieved, resulting in a FOM > 5. For Hydex and SiN waveguides, enhanced FWM in the GO-coated waveguides is achieved, where conversion efficiency (CE) enhancements of up to 6.9 dB and 9.1 dB relative to the uncoated waveguides. For MRRs, an increase of up to ~10.3 dB in the FWM CE is achieved due to the resonant enhancement effect. These results reveal the strong potential of GO films to improve the nonlinear optics of nanowires, waveguides, and ring resonators.

  • RF and microwave photonic signal processing and generation using optical micro-combs

    David Moss

    JOSarXiv.202206.0002     (Submitted on 2022-06-17)

    Abstract(118) PDF (20)

    We demonstrate a radio frequency (RF) phase-encoded signal generator as well as a user-defined RF arbitrary waveform generator (AWG) based on a soliton crystal micro-comb generated by an integrated MRR with a free spectral range of ~49 GHz. Owing to the soliton crystal’s robust and stable generation as well as the high intrinsic efficiency, RF phase-encoded signal generators and AWGs with simple operation and fast reconfiguration are realized. The soliton crystal micro-comb provides 60 wavelengths for RF phase-encoded signal generators, achieving a phase encoding speed of 5.95 Gb/s and a high pulse compression ratio of 29.6. Over 80 wavelengths are employed for the AWGs, achieving tunable square waveforms with a duty cycle ratio ranging from 10% to 90%, sawtooth waveforms with tunable slope ratios from 0.2 to 1, and symmetric concave quadratic chirp waveforms. Our system has great potential to achieve RF and microwave photonic signal generation and processing with low cost and footprint.

  • An E-Band CMOS Frequency Quadrupler with 1.7-dBm Output Power and 45-dB Fundamental Suppression

    Xiaofei Liao, Dixian Zhao, Xiaohu You

    JOSarXiv.202204.0003     (Submitted on 2022-05-07)

    Abstract(72) PDF (9)

    This paper presents an E-band frequency quadrupler in 40-nm CMOS technology. The circuit employs two push-push frequency doublers and two single-stage neutralized amplifiers. The pseudo-differential class-B biased cascode topology is adopted for the frequency doubler, which improves the reverse isolation and the conversion gain. Neutralization technique is applied to increase the stability and the power gain of the amplifiers simultaneously. The stacked transformers are used for single-ended-to-differential transformation as well as output bandpass filtering. The output bandpass filter enhances the 4th-harmonic output power, while rejecting the undesired harmonics, especially the 2th harmonic. The core chip is 0.23 mm2 in size and consumes 34 mW. The measured 4th harmonic achieves a maximum output power of 1.7 dBm with a peak conversion gain of 3.4 dB at 76 GHz. The fundamental and 2nd-harmonic suppressions of over 45 dB and 20 dB are achieved for the spectrum from 74 to 82 GHz, respectively.

  • Anisotropic Mechanical, Optical and Electric Transport Properties of Monolayer TiNI

    Shujuan Li, Min Li, Chenggong Zhang, Kunyue Shi, Peiji Wang

    JOSarXiv.202204.0004     (Submitted on 2022-05-07)

    Abstract(70) PDF (6)

    Two-dimensional materials with anisotropy have always been sought by researchers. In this paper, we report a stable two-dimensional TiNI monolayers with anisotropic mechanical, optical and electrical transmission properties. Using non-equilibrium Green's function combined with density functional theory, we find that two-dimensional TiNI has mechanical, optical and electron transport properties dependent on lattice orientation. Moreover, the maximum Young's modulus of the single-layer TiNI can reach can reach 160 N·m-1. The calculation of electrical transport properties also shows that TiNI monolayer has anisotropic electron transport performance, and two-dimensional TiNI tends to transmit current along the direction b, and the intensity of its electron transport is about 6 times that of the transmission along the direction a. The anisotropic mechanical and optical properties, adjustable band gap and unique electron transport characteristics make two-dimensional TiNI potentially valuable in the field of nano-optoelectronics.

  • High precision temperature sensor based on FinFET device structure

    MO Xiao, KONG Dexin,LI Dong,LU Tengteng

    JOSarXiv.202205.0001     (Submitted on 2022-05-07)

    Abstract(112) PDF (11)

    With the advancement of the standard CMOS process below 20nm, the planar CMOS transistor began to transition to the three-dimensional (3D) FinFET device structure, and the current gain of the parasitic transistor decreased significantly. The temperature sensing circuit with the parasitic PNP tube as the temperature sensing device is no longer applicable. Based on the standard CMOS process and using vertical NPN transistor as temperature sensor, this paper gives the design of a temperature sensor based on 3D FinFET device structure. In the temperature range of - 55 ℃ to + 125 ℃, the digital temperature sensor IP has the circuit simulation accuracy of ± 0.2℃ and the chip test accuracy of ± 0.3℃.

  • MODULATION OF THE SOLID REACTION BETWEEN NICKEL AND (100) GE SUBSTRATES BY AN ULTRATHIN ALUMINUM LAYER

    Huajun Ding,Zhongying Xue,Xing Wei

    JOSarXiv.202203.0001     (Submitted on 2022-03-15)

    Abstract(141) PDF (22)

    In this paper, the thermal stability of NiGe films formed on (100) Ge substrates was improved from 450 to 600°C by adding an ultrathin Al layer to the Ni deposition process. The improvement is due to the formation of Ni-Ge-Al hybrid layer on the NiGe surface, which acts as a capping layer to suppress the NiGe film from agglomerating at high temperatures. The sheet resistivity of NiGe is slightly reduced by the Al incorporation, making this method promising for S/D contact of Ge MOSFETs

  • Fully-integrated multipurpose microwave frequency identification system on a single chip

    Yuhan Yao, Yuhe Zhao, Yanxian Wei, Feng Zhou, Daigao Chen, Yuguang Zhang, Xi Xiao, Ming Li, Jianji Dong, Shaohua Yu, Xinliang Zhang

    JOSarXiv.202202.0002     (Submitted on 2022-02-18)

    Abstract(210) PDF (36)

    We demonstrate a fully-integrated multipurpose microwave frequency identification system on silicon-on-insulator platform. Thanks to the multipurpose features, the chip is able to identify different types of microwave signals, including single-frequency, multiple-frequency, chirped and frequency-hopping microwave signals, as well as discriminate instantaneous frequency variation among the frequency-modulated signals. This demonstration exhibits fully integrated solution and fully functional microwave frequency identification, which can meet the requirements in reduction of size, weight and power for future advanced microwave photonic processor.

  • A cross-coupled interlocked-storage-cells-based quadruple-node upsets self-recoverable latch design

    Zhou Jing, Xu Hui

    JOSarXiv.202112.0004     (Submitted on 2022-02-18)

    Abstract(154) PDF (18)

    With the shrinking technology size, CMOS circuits’ immunity to the space radiation environment decreases. As a result, when these deep submicron devices are used in memory cells in space environments, single-event upsets (SEUs), also known as soft errors, can cause permanent damage to devices. This paper proposed a latch design that can be self-recoverable from any possible quadruplenode upsets (QNUs). The latch includes four double interlocking modules, each of which comprises four interlocking units and has double-node upset (DNU) self-recovery ability. The simulation results show that the quadruple-node upset self-recoverable latch (QNUSRL) proposed in this paper has some advantages over the latest multi-node upsets (MNUs) tolerance latches. Compared with QNURL, the delay and area are reduced by 30.69%, 12.95%, respectively. The process, voltage, and temperature variation analysis show that the proposed QNUSRL latch is less sensitive to changes.

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