Gallium Oxide (Ga2O3) has attracted significant research interest for next-generation high-efficiency power devices because of their unique electronic properties such as ultra-wide band gap, high breakdown electric field, and large Baliga's figure of merit. Ga2O3 crystallizes in a series of reported polymorphs including β-, α-, ε-, κ-, γ- and δ-Ga2O3, the structures of some of which are still in serious controversy. We herein performed a polymorph structure search study of Ga2O3 by combining particle swarm optimization with first-principles energetic calculations. In addition to producing the predominant experimental known phases of β-, α- and κ-Ga2O3, we found two new polymorphs with space group P-1 and Pmc21 consisting of four- and five-fold coordinated Ga. They show comparable energy with β- and α-Ga2O3 with the energy difference of several meV/atom, and exhibit robust phonon stability. Similarly, the new phases show quite wide band gaps and small electron effective masses by comparing it with other known phases. The Pmc21 phase shows a calculated spontaneous polarization of 0.277 C/m2, close to that of ε/κ-Ga2O3. Our systemic structure searches also establish a structural relationship between ε-Ga2O3 and κ-Ga2O3 and how the electronic properties vary with polymorphic phase change.
Discovery of new polymorphs of gallium oxides with particle swarm optimization based structure searches
Xue Wang, Muhammad Faizan, Guangren Na, Xin He, YuHao Fu, Lijun Zhang
JOSarXiv.202004.0001 (Submitted on 2020-04-21)
Abstract(157) PDF (2)
He Li, Menglin Huang and Shiyou Chen
JOSarXiv.202003.0001 (Submitted on 2020-03-20)
Abstract(129) PDF (8)
Using first-principles calculations, we explored all the 21 defect-pairs in GaN and considered 6 configurations with different defect-defect distances for each defect-pair. 15 defect-pairs with short defect-defect distances are found to be stable during structural relaxation, so they can exist in the GaN lattice once formed during the irradiation of high-energy particles. 9 defect-pairs have formation energies lower than 10 eV in the neutral state. The vacancy-pair VN-VN is found to have very low formation energies, as low as 0 eV in p-type and Ga-rich GaN, and act as efficient donors producing two deep donor levels, which can limit the p-type doping and minority carrier lifetime in GaN. VN-VN has been overlooked in the previous study of defects in GaN. Most of these defect-pairs act as donors and produce a large number of defect levels in the band gap. Their formation energies and concentrations are sensitive to the chemical potentials of Ga and N, so their influences on the electrical and optical properties of Ga-rich and N-rich GaN after irradiation should differ significantly. These results about the defect-pairs provide fundamental data for understanding the radiation damage mechanism in GaN and simulating the defect formation and diffusion behavior under irradiation.
Ye Yang, Xiao Xiang, Feiyan Hou, Runai Quan, Baihong Li, Wei Li, Ninghua Zhu, Tao Liu, Shougang Zhang, Ruifang Dong, and Ming Li
JOSarXiv.201912.0001 (Submitted on 2020-01-02)
Abstract(339) PDF (10)
Nonlocal wavelength-to-time mapping between frequency entangled photon pairs generated with the process of spontaneous parametric down-conversion is theoretically analyzed and experimentally demonstrated. The spectral filtering pattern experienced by one photon in the photon pair will be non-locally mapped into the time domain when the other photon propagates inside a dispersion-compensation fiber with large group velocity dispersion. Our work, for the first time, points out that the spectral bandwidth of the pump laser will become the dominated factor preventing the improvement of the spectral resolution when the involved group velocity dispersion is large enough, which provides an excellent tool of characterizing the resolution of a nonlocal wavelength-to-time mapping for further quantum information applications.
Gang Wang, Juan Lv, Hongjuan Wang, Xiang-Wei Jiang*, Jun-Wei Luo*, and Shu-Shen Li
JOSarXiv.202001.0001 (Submitted on 2020-01-02)
Abstract(1167) PDF (14)
The potential fluctuations from individual impurities in a MOSFET was recognized as being an important factor that degrades the nanoscale transistors, requiring to control the positioning of these impurities to improve the reproducibility and reliability. In this paper, we study the fluctuations in the hole mobility arising from the randomly placing of Si and Ge atoms within the SiGe channel, which is considering to replace the silicon channel in an attempt to boost the hole mobility due to Ge offering four times higher hole mobility than Si. We conclude that (i) the hole mobility fluctuates in a large range (as large as 100%) among distinct arrangements of Si and Ge atoms within the 9 nm scale SiGe channel, (ii) arising mainly from the switching of band order and admixture between heavy-hole and light-hole bands, (iii) that in turn causes fluctuations in off current Ioff and threshold voltage Vth, and makes reproducibility a challenge for SiGe to be a Si channel replacement for nanoscale PMOS.
Zeping Zhao, Jianguo Liu, Yu Liu, Ninghua Zhu
JOSarXiv.201912.0002 (Submitted on 2020-01-02)
Abstract(484) PDF (8)
This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetectors from development history, research hotspots to packaging technologies is provided to the best of our knowledge. A few typical applications based on photodetectors are also illustrated, such as free-space optical communications, radio over fiber and millimeter terahertz signal generation systems.
Improved efficiency and photo-stability of methylamine-free perovskite solar cells via cadmium doping
Yong Chen, Yang Zhao, Qiufeng Ye, Zema Chu, Zhigang Yin, Xingwang Zhang, Jingbi You
JOSarXiv.201912.0003 (Submitted on 2019-12-31)
Abstract(2406) PDF (22)
Although perovskite solar cells containing methylamine cation can show high power conversion efficiency, stability is a concern. Here, methylamine-free perovskite material CsxFA1–xPbI3 was synthesized by a one-step method. In addition, we incorporated smaller cadmium ions into mixed perovskite lattice to partially replace Pb ions to address the excessive internal strain in perovskite structure. We have found that the introduction of Cd can improve the crystallinity and the charge carrier lifetime of perovskite films. Consequently, a power conversion efficiency as high as 20.59% was achieved. More importantly, the devices retained 94% of their initial efficiency under 1200 h of continuous illumination.
- Physics Materials and Devices of Conventional Semiconductors (3)
- Organic and Perovskite Semiconductors Based Optoelectronic Devices (1)
- Wide Bandgap Semiconductors (1)
- Semiconductor Quantum Devices and Physics (1)
- Optoelectronic Devices and Integration (0)
- Microelectronic Devices and (Integrated) Circuits (0)
- Semiconductor Spintronics (0)
- Flexible Electronics (0)
- Semiconductors and New Energy (0)
- Two-Dimensional Materials and Related Physics and Devices (0)