Investigation and Analysis of On-Chip ESD Protection Circuit under Electromagnetic Pulse

Abstract: The electrostatic discharge (ESD) protection circuit widely exists in the input and output ports of CMOS digital circuits, and electromagnetic pulse coupled into the device not only interacts with the CMOS circuit, but also acts on the protection circuit. This paper establishes on-chip electrostatic discharge protection circuit model, and draws the lattice temperature, current density and electric field intensity distribution from the multi-physical parameter model to explore the changes of the internal devices when the pulse comes. The results show that the ESD protection circuit has potential damage risk, and the injection of EMP leads to irreversible heat loss inside the circuit. In addition, pulse signals with different attributes will change the damage threshold of the circuit. These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip, which is helpful to carry out the reliability enhancement research of ESD protection circuit.

Key words: Damage effect; damage location prediction; electromagnetic pulse (EMP); on–chip ESD protection circuit

Cite as: JOSarXiv.202405.0001

Version History