High growth-rate synthesis is the characteristic feature of the horizontal gradient freezing technique by Bridgman for growth of single crystal such as InP, but the relevant growth is more exposed to Si contamination due the requirement of temperature higher than the melting point at the synthesize zone, therefore, the modified Bridgman methods HGF, and VGF that realizes by reducing the temperature of the growth region was developed which are the main topics discussed in this paper. Another improvement that presented is related by using pBN crucibles instead of using of quartz boat during the growth can degrading the Si contamination.

Gate all around field effect transistors (GAA-FET) are treated as best potentials for 3nm and beyond technology nodes attributed to their better short channel effect (SCE) suppression ability caused by surrounding gate structure. They have been put forth recently to replace Fin field effect transistor (FinFET), which had dominated the semiconductor market from 22nm to 5nm technology nodes. The device performance can be significantly impacted by device structure. Herein, we checked the scaling performance of the Si nanowire GAA-FET with a HfO2 thickness of 1nm, S/D doping concentration n of 1×10 20 /cm 3 , channel doping concentration of 1×1017 /cm 3 , animproved I on , degraded I off and SS with shrinking of the gate length (L g ) had been observed. On the other hand, an intensive study of the parameters variation impact on the device performance of Si nanowire GAA-FETs, including high k thickness, T ox ; nanowire radius, r, and source/drain doping concentration, n, had been conducted, the relation of SCE with respect to the parameters mentioned above had been sufficiently studied as well. It will be more promising if the super gate electrostatic control ability of GAA-FET structure is combined with ultra-steep behavior (brought about by negative capacitance effect, or tunnel effect and so on) to overcome the degraded SCEs and large power consumption dissipation problems

Viable solar energy materials for solar cell application are on the front burner for researchers in material science due to the world energy crisis. We investigated the structural, electronic, phonon, and transport properties of ScAgC half Heusler alloy using the density functional theory based on the Purdue-Burke-Enzerhof generalized gradient approximation and HSE hybrid exchange-correlation functional implemented in quantum espresso. The band gap, lattice constant, and other structural and electronic property results obtained compare well with results from previous work. The hole and electron doping and carrier concentrations suggest that ScAgC is a better thermoelectric material and an n-type semiconductor. The optical properties show a high absorption coefficient, which increased from 7 × 104 cm−1 to 39 × 104 cm−1 through the visible light region. The high reflectivity exceeds 30% in the visible region and supports the use of ScAgC alloy in optoelectronic applications, solar and photovoltaic cells. The plasmon frequency for ScAgC alloy is 14.49 eV supporting its application as a solar cell material. The alloy is stable at low/medium temperatures but unstable at high temperatures. The clear wide phonon band gap between the acoustic and optical branches supports a strong ionic bonding that suggests the material is rigid.

In this current study, we theoretically study how anisotropic parabolic potential affects polaron n excited state in strongly coupled polar crystals (KBr, KCl, RbCl) in asymmetric Gaussian potential quantum wells, through the combined approach of one unitary transformation and linear combination operator. In the restriction limit of strong coupling, we derive rigorous results for excited state energy. By using this combination method, polaron energy and electron energy are compared which energy both polaron and electron is affected by confined potential. In addition, the relationship between energy difference and coupling strength is also discussed. It is hoped that the theoretical results reveal a promising and importance of further study of polaron.

In this manuscript, some physical properties for a thin film of iron oxide were found, and one of the most important observations that were discovered was finding a large value of the optical conductivity of this sample, which confirms that this large value indicates that there is a very high optical response to the thin film. The increase in the optical conductivity is due to the higher photon energies which indicate the higher absorption of the thin iron oxide film, which may be caused by the electron excitation at wavelengths as shown in Figures (7) and (8) in this manuscript.

We propose and theoretically investigate integrated photonic filters based on coupled Sagnac loop reflectors (SLRs) formed by a self-coupled wire waveguide. By tailoring coherent mode interference in the device, three different filter functions are achieved, including Fano-like resonances, wavelength interleaving, and varied resonance mode splitting. For each function, the impact of device structural parameters is analyzed to facilitate optimized performance. Our results theoretically verify the proposed device as a compact multi-functional integrated photonic filter for flexible spectral shaping.

Layered two-dimensional (2D) GO films are integrated with silicon-on-insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through self-phase modulation (SPM). The GO films are integrated with SOI nanowires using a large-area, transfer-free, layer-by-layer coating method that yields precise control of the film thickness. The film placement and coating length are controlled by opening windows in the silica cladding of the SOI nanowires. Owing to the strong mode overlap between the SOI nanowires and the highly nonlinear GO films, the Kerr nonlinearity of the hybrid waveguides is significantly enhanced. Detailed SPM measurements using picosecond optical pulses show significant spectral broadening enhancement for SOI nanowires coated with 2.2-mm-long films of 1−3 layers of GO, and 0.4-mm-long films with 5−20 layers of GO. By fitting the experimental results with theory, the dependence of GO’s n2 on layer number and pulse energy is obtained, showing interesting physical insights and trends of the layered GO films from 2D monolayers to quasi bulk-like behavior. Finally, we show that by coating SOI nanowires with GO films the effective nonlinear parameter of SOI nanowires is increased 16 fold, with the effective nonlinear figure of merit (FOM) increasing by about 20 times to FOM > 5. These results reveal the strong potential of using layered GO films to improve the Kerr nonlinear optical performance of silicon photonic devices.

We present and investigate theoretically photonic integrated filters based on 2 Sagnac coupled loop reflectors (SLRs) that are arranged in a self-coupled optical waveguide. We recently presented photonic integrated filters based on coupled and cascaded SLRs. In this paper, we advance this field by investigating a unique approach of employing coupled SLRs formed by self-coupled waveguides. This allows us to achieve high performance filter functions including Fano-like resonances and wavelength interleaving with a simpler design and a higher fabrication tolerance by tailoring coherent mode interference in the device. Our design takes into account the device fabrication issues as well as the requirements for practical applications. As a guide for practical device fabrication, an analysis of the impact of the structural parameters and fabrication tolerance on each filter function is also provided. The Fano-like resonances show a low insertion loss (IL) of 1.1 dB, a high extinction ratio of 30.2 dB, and a high slope rate (SR) of 747.64 dB/nm. The combination of low IL and high SR promises this device for Fano resonance applications. Our device also can achieve wavelength de-interleaving function with high fabrication tolerance which is advantageous for applications such as optical interleavers that require a symmetric flat-top filter shape. Optical de-interleavers and interleavers are key components for optical signal multiplexing and demultiplexing for wavelength division multiplexing optical communication systems. Versatile spectral responses with a simple design, compact device footprint, and high fabrication tolerance make this approach highly promising for flexible response shaping for many applications.

We report enhanced nonlinear optics in nanowires, waveguides, and ring resonators by introducing layered two-dimensional (2D) graphene oxide (GO) films through experimental demonstration. The GO films are integrated on silicon-on-insulator nanowires (SOI), high index doped silica glass, and silicon nitride (SiN) waveguides and microring resonators (MRRs), to demonstrate an improved optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). By using a large-area, transfer-free, layer-by-layer GO coating method with photolithography and lift-off processes, we integrate GO films on these complementary metal-oxide-semiconductor (CMOS)-compatible devices. For SOI nanowires, significant spectral broadening of optical pulses in GO-coated SOI nanowires induced by self-phase modulation (SPM) is observed, achieving a high spectral broadening factor of 4.34 for a device with a patterned film including 10 layers of GO. A significant enhancement in the nonlinear figure of merit (FOM) for silicon nanowires by a factor of 20 is also achieved, resulting in a FOM > 5. For Hydex and SiN waveguides, enhanced FWM in the GO-coated waveguides is achieved, where conversion efficiency (CE) enhancements of up to 6.9 dB and 9.1 dB relative to the uncoated waveguides. For MRRs, an increase of up to ~10.3 dB in the FWM CE is achieved due to the resonant enhancement effect. These results reveal the strong potential of GO films to improve the nonlinear optics of nanowires, waveguides, and ring resonators.

In this paper, the thermal stability of NiGe films formed on (100) Ge substrates was improved from 450 to 600°C by adding an ultrathin Al layer to the Ni deposition process. The improvement is due to the formation of Ni-Ge-Al hybrid layer on the NiGe surface, which acts as a capping layer to suppress the NiGe film from agglomerating at high temperatures. The sheet resistivity of NiGe is slightly reduced by the Al incorporation, making this method promising for S/D contact of Ge MOSFETs