The plasma etching anisotropy of monocrystalline silicon along different crystal orientations

Abstract: In this paper, the principle of the plasma etching anisotropy of monocrystalline silicon along different crystal orientations is expounded. The process of creating deep holes in monocrystalline silicon and subsequently performing cross-cut etching to form a reaming zone is visually demonstrated through specific experimental design to meet the conditions. The relationship between crystal orientation, depth-to-width ratio, etching condition and etching anisotropy is analyzed in detail. Finally, the scenarios that can be applied by using this etching mechanism in the future are prospected.

Key words: monocrystalline silicon; plasma etching; crystal orientation; anisotropy; depth-to-width ratio

Cite as: JOSarXiv.202406.0001

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