Laixiang Qin, Chunlai Li, Yiqun Wei, Yandong He, Guoqing Hu, Jin he
Corresponding Author: Laixiang Qin, qinlaix@pku.edu.cn
Abstract: Gate all around field effect transistors (GAA-FET) are treated as best potentials for 3nm and beyond technology nodes attributed to their better short channel effect (SCE) suppression ability caused by surrounding gate structure. They have been put forth recently to replace Fin field effect transistor (FinFET), which had dominated the semiconductor market from 22nm to 5nm technology nodes. The device performance can be significantly impacted by device structure. Herein, we checked the scaling performance of the Si nanowire GAA-FET with a HfO2 thickness of 1nm, S/D doping concentration n of 1×10 20 /cm 3 , channel doping concentration of 1×1017 /cm 3 , animproved I on , degraded I off and SS with shrinking of the gate length (L g ) had been observed. On the other hand, an intensive study of the parameters variation impact on the device performance of Si nanowire GAA-FETs, including high k thickness, T ox ; nanowire radius, r, and source/drain doping concentration, n, had been conducted, the relation of SCE with respect to the parameters mentioned above had been sufficiently studied as well. It will be more promising if the super gate electrostatic control ability of GAA-FET structure is combined with ultra-steep behavior (brought about by negative capacitance effect, or tunnel effect and so on) to overcome the degraded SCEs and large power consumption dissipation problems
Key words: short channel effect; gate all around field effect transistor; on state current; I on /I off ratio; Subthreshold Swing; Drain Induced Barrier Lower.
Cite as: JOSarXiv.202303.0004
Version History
[V1] | 2023-03-08 04:51:01 | JOSarXiv.202303.0004V1 | Download |
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Manuscript received: 08 March 2023
Manuscript published: 10 March 2023
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