Experimental Investigation of Photocatalytic Assisted CMP on Different Crystal Planes of Single Crystal GaN

Abstract: In this polishing experiment, the polishing effects of different crystal facets (Ga-face and N-face) of single-crystal gallium nitride (GaN) during the process of Photo-Catalyzed Chemical Mechanical Polishing (PACMP) were investigated by combining photocatalysis with chemical mechanical polishing (CMP). Furthermore, the influence mechanisms of polishing effects on different crystal facets were analyzed. Additionally, a comparison was made among three polishing methods: polishing without light, polishing with light polishing pad, and polishing with light polishing slurry. Various factors, such as TiO2 concentration, pH value, H2O2 concentration, polishing pressure, polishing pad rotational speed, and polishing slurry flow rate, were also studied to determine their impact on the polishing effects of GaN crystals on different facets. The process parameters were optimized accordingly.The experiments demonstrated that under the conditions of Photo-Catalyzed Chemical Mechanical Polishing with ultraviolet light assistance, the material removal rate (MRR) of Ga-face of GaN crystals can reach 698.864 nm/h, with a surface roughness (Ra) value of 0.430 nm and a root mean square height (Sq) of 0.842 nm. The MRR of N-face of GaN crystals can reach 619.435 nm/h, with an Ra value of 0.725 nm and an Sq of 1.162 nm. The composite polishing method of ultraviolet light-assisted CMP can achieve sub-nanometer-level super-smooth GaN crystal surfaces. Among them, the light polishing slurry method significantly improves the polishing efficiency and facilitates the rapid removal of Ga2O3 on the GaN surface.

Key words: GaN; UV Photocatalysis; Chemical Mechanical Polishing; Sub-nanoscale; Sq

Cite as: JOSarXiv.202309.0002

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