HORIZONTAL BRIDGMAN TECHNIQUE FOR GROWTH OF INDIUM PHOSPHIDE CRYSTAL

Abstract: High growth-rate synthesis is the characteristic feature of the horizontal gradient freezing technique by Bridgman for growth of single crystal such as InP, but the relevant growth is more exposed to Si contamination due the requirement of temperature higher than the melting point at the synthesize zone, therefore, the modified Bridgman methods HGF, and VGF that realizes by reducing the temperature of the growth region was developed which are the main topics discussed in this paper. Another improvement that presented is related by using pBN crucibles instead of using of quartz boat during the growth can degrading the Si contamination.

Key words: the silicon contamination; dislocation; Auger spectroscopy; Phase transfer; Doping

Cite as: JOSarXiv.202403.0001

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