TOPIC> Semiconductor Integrated Circuits

High precision temperature sensor based on FinFET device structure

MO Xiao, KONG Dexin,LI Dong,LU Tengteng

  • Anhui Siliepoch Technology Company, Hefei, Anhui 231500, P.R China; 

Corresponding Author: MO Xiao,

Abstract: With the advancement of the standard CMOS process below 20nm, the planar CMOS transistor began to transition to the three-dimensional (3D) FinFET device structure, and the current gain of the parasitic transistor decreased significantly. The temperature sensing circuit with the parasitic PNP tube as the temperature sensing device is no longer applicable. Based on the standard CMOS process and using vertical NPN transistor as temperature sensor, this paper gives the design of a temperature sensor based on 3D FinFET device structure. In the temperature range of - 55 ℃ to + 125 ℃, the digital temperature sensor IP has the circuit simulation accuracy of ± 0.2℃ and the chip test accuracy of ± 0.3℃.

Key words: 3D FinFET structure; current gain; vertical NPN; digital temperature sensor

Cite as: JOSarXiv.202205.0001

Recommended references: MO Xiao, KONG Dexin,LI Dong,LU Tengteng . (2022). High precision temperature sensor based on FinFET device structure. [JOSarXiv.202205.0001]   (Copy)

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[V1] 2022-05-05 10:25:17 JOSarXiv.202205.0001V1Download

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Manuscript received: 05 May 2022

Manuscript published: 07 May 2022

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