MO Xiao， KONG Dexin，LI Dong，LU Tengteng
Corresponding Author: MO Xiao, firstname.lastname@example.org
Abstract: With the advancement of the standard CMOS process below 20nm, the planar CMOS transistor began to transition to the three-dimensional (3D) FinFET device structure, and the current gain of the parasitic transistor decreased significantly. The temperature sensing circuit with the parasitic PNP tube as the temperature sensing device is no longer applicable. Based on the standard CMOS process and using vertical NPN transistor as temperature sensor, this paper gives the design of a temperature sensor based on 3D FinFET device structure. In the temperature range of - 55 ℃ to + 125 ℃, the digital temperature sensor IP has the circuit simulation accuracy of ± 0.2℃ and the chip test accuracy of ± 0.3℃.
Cite as: JOSarXiv.202205.0001
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Manuscript received: 05 May 2022
Manuscript published: 07 May 2022