This paper presents an E-band frequency quadrupler in 40-nm CMOS technology. The circuit employs two push-push frequency doublers and two single-stage neutralized amplifiers. The pseudo-differential class-B biased cascode topology is adopted for the frequency doubler, which improves the reverse isolation and the conversion gain. Neutralization technique is applied to increase the stability and the power gain of the amplifiers simultaneously. The stacked transformers are used for single-ended-to-differential transformation as well as output bandpass filtering. The output bandpass filter enhances the 4^th-harmonic output power, while rejecting the undesired harmonics, especially the 2^th harmonic. The core chip is 0.23 mm² in size and consumes 34 mW. The measured 4^th harmonic achieves a maximum output power of 1.7 dBm with a peak conversion gain of 3.4 dB at 76 GHz. The fundamental and 2^nd-harmonic suppressions of over 45 dB and 20 dB are achieved for the spectrum from 74 to 82 GHz, respectively.

With the advancement of the standard CMOS process below 20nm, the planar CMOS transistor began to transition to the three-dimensional (3D) FinFET device structure, and the current gain of the parasitic transistor decreased significantly. The temperature sensing circuit with the parasitic PNP tube as the temperature sensing device is no longer applicable. Based on the standard CMOS process and using vertical NPN transistor as temperature sensor, this paper gives the design of a temperature sensor based on 3D FinFET device structure. In the temperature range of - 55 ℃ to + 125 ℃, the digital temperature sensor IP has the circuit simulation accuracy of ± 0.2℃ and the chip test accuracy of ± 0.3℃.

With the shrinking technology size, CMOS circuits’ immunity to the space radiation environment decreases. As a result, when these deep submicron devices are used in memory cells in space environments, single-event upsets (SEUs), also known as soft errors, can cause permanent damage to devices. This paper proposed a latch design that can be self-recoverable from any possible quadruplenode upsets (QNUs). The latch includes four double interlocking modules, each of which comprises four interlocking units and has double-node upset (DNU) self-recovery ability. The simulation results show that the quadruple-node upset self-recoverable latch (QNUSRL) proposed in this paper has some advantages over the latest multi-node upsets (MNUs) tolerance latches. Compared with QNURL, the delay and area are reduced by 30.69%, 12.95%, respectively. The process, voltage, and temperature variation analysis show that the proposed QNUSRL latch is less sensitive to changes.

Power in Watts of the chip, per unit area is growing exponentially in the electronic industry. At the same time, thermal problems becoming side effects of huge power consumption. Continuous efforts are getting made to remove the thermal problems of electronic packaging and systems. Thermal problems if not alleviated or suppressed, will lead the dielectric breakdown, electromigration, material creep, thermal cycling, chemical reactions, board warpage, performance drift, indirect heating, and many more problems. Likewise, a dedicated Power Delivery/distribution Network (PDN), can deliver the power to the chip base, this paper has introduced a new methodology of a dedicated Thermal Collection Network (TCN) in the same Back End Of Line (BEOL) area of the System in Package (SiP), System on Chip (SOC) and any other power-consuming chips. Adding a Thermal Through Silicon Via (TTSV) is another advantage in it. Using such an apparatus or methodology connected to TTSV will quickly pump-up the thermal energy to the heat-sink-fan assembly. Hence, preempting of heat from its sources can manage the thermal problems inside the chips or 3-D IC structures. The methodology uses the same copper metal stripes inside the Inter-Layer/Level-Dielectric (ILD), which will not lead to any extra copper to introduce more Coefficient of Thermal Efficiency (CTE) mismatch problems. It would be considered as one among the other metal stripes. The experimental results using the Finite Element Method (FEM) tool shown that 32% heat suction occurs in the TCNs, in monolithic ICs, and 11% in 3-D IC structures, compared to without such an approach. The junction temperature remained at 35%, with and without such an approach, in 3-D IC structures. This might lead to a new methodology for designing electronic chips and 3-D IC structures, in the future.