TOPIC> Optoelectronic Devices and Integration

Ultra low dark count InGaAsInP Single photon avalanche diodee

Bin Li, Yuxiu Niu, Yinde Feng, Xiaomei Chen

  • Accelink Technologies Co., LTD; 

Corresponding Author: ${correspondingAuthorString}

Abstract: A low noise InGaAs/InP single photon avalanche diode is demonstrated. The device is based on planar type separate absorption, grading, charge and multiplication structure. Relying on reasonably designed device structure and low-damage Zn diffusion technology, excellent low-noise performance is achieved. Due to its importance, the physical mechanism of dark count is analyzed through performance characterization at different temperatures. The device can achieve 20% single photon detection efficiency and 3.2E-7/ns dark count rate with a low after pulsing probability of 0.57% at 233K. This is, to the best of our knowledge, the lowest DCR reported at the same condition.

Key words: InGaAs/InP; Single photon avalanche diode; dark count


Cite as: JOSarXiv.202112.0005


Recommended references: Bin Li, Yuxiu Niu, Yinde Feng, Xiaomei Chen . (2021). Ultra low dark count InGaAsInP Single photon avalanche diodee. [JOSarXiv.202112.0005]   (Copy)

Version History

[V1] 2021-12-22 10:01:01 JOSarXiv.202112.0005V1Download

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History

Manuscript received: 22 December 2021

Manuscript published: 07 January 2022

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