Ultra low dark count InGaAsInP Single photon avalanche diodee

Abstract: A low noise InGaAs/InP single photon avalanche diode is demonstrated. The device is based on planar type separate absorption, grading, charge and multiplication structure. Relying on reasonably designed device structure and low-damage Zn diffusion technology, excellent low-noise performance is achieved. Due to its importance, the physical mechanism of dark count is analyzed through performance characterization at different temperatures. The device can achieve 20% single photon detection efficiency and 3.2E-7/ns dark count rate with a low after pulsing probability of 0.57% at 233K. This is, to the best of our knowledge, the lowest DCR reported at the same condition.

Key words: InGaAs/InP; Single photon avalanche diode; dark count

Cite as: JOSarXiv.202112.0005

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