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Direct calculations on the band offsets of large-lattice-mismatched and heterovalent Si and III-V semiconductors

Yu-Ying Hu1,2, Chen Qiu1, Tao Shen1,2, Kaike Yang3, and Hui-Xiong Deng1,2

  • 1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences; 
  • 2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences; 
  • 3. Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications, Department of Physics, Hunan Normal University; 

Corresponding Author: Hui-Xiong Deng[1,2], hxdeng@semi.ac.cn

Abstract: Band offset in semiconductors is a fundamental physical quantity that determines the performance of optoelectronic devices. However, the current method of calculating band offset is difficult to be applied directly to the large-lattice-mismatched and heterovalent semiconductors because of existing electric field and large strain at the interfaces. Here, we proposed a modified method to calculate band offsets for such systems, in which the core energy level shifts caused by heterovalent effects and lattice mismatch are estimated by interface reconstruction and insertion of unidirectional strain structures as transitions, respectively. Taking the Si and III-V systems as examples, the results have the same accuracy as widely used method for small-lattice-mismatched systems, and are much closer to the experimental values for the large-lattice-mismatched and heterovalent systems. Furthermore, by systematically studying the heterojunctions of Si and III-V semiconductors along different directions, it is found that the band offsets of Si/InAs and Si/InSb systems in [100], [110] and [111] directions belong to the type I, and could be beneficial for silicon-based luminescence performance. Our study offers a more reliable and direct method for calculating band offsets of large-lattice-mismatched and heterovalent semiconductors, and could provide theoretical support for the design of the high-performance silicon-based light sources.

Key words: Si-based luminescence; band offset; lattice mismatch; heterovalent semiconductors


Cite as: JOSarXiv.202105.0001


Recommended references: Yu-Ying Hu, Chen Qiu, Tao Shen, Kaike Yang, Hui-Xiong Deng . (2021). Direct calculations on the band offsets of large-lattice-mismatched and heterovalent Si and III-V semiconductors. [JOSarXiv.202105.0001]   (Copy)

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[V1] 2021-05-19 05:09:47 JOSarXiv.202105.0001V1Download

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Manuscript received: 19 May 2021

Manuscript published: 21 May 2021

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