TOPIC> Wide Bandgap Semiconductors

Phonon sidebands of the optical spectrum for the defect structure GaN: CN+ON

Yao Xiao1, Wen Xiong2, and Ziwu Wang1

  • 1. Department of Physics, School of Science, Tianjin University; 
  • 2. Department of Physics, Chongqing University,; 

Corresponding Author: Ziwu Wang, wangziwu@tju.edu.cn

Abstract: We investigate the multi-phonon sidebands of the optical spectra of point defects in GaN based on the Huang-Rhys model, in which the localized phonon modes and the reorganization energy associated with the defect structure GaN: CN+ON are precisely calculated by ab initio approach. We present multi-phonon sidebands for both the localized phonon modes and intrinsic longitudinal optical phonon modes and give the comparisons between them in detail. Meanwhile, different types of the combinational phonon sidebands that are consisted of two localized phonon modes with different proportions are proposed. These multi-phonon sidebands not only could be used for the analysis of fine structure of the optical spectra, but also served as the fingerprints for the defect structures.

Key words: multiphonon sidebands; Huang-Rhys model; Point defect


Cite as: JOSarXiv.202101.0002


Recommended references: Yao Xiao, Wen Xiong, Ziwu Wang . (2021). Phonon sidebands of the optical spectrum for the defect structure GaN: CN+ON. [JOSarXiv.202101.0002]   (Copy)

Version History

[V2] 2021-01-26 08:44:20 JOSarXiv.202101.0002V2Download
[V1] 2021-01-25 09:39:01 JOSarXiv.202101.0002V1Download

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History

Manuscript received: 26 January 2021

Manuscript published: 26 January 2021

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