Comparing 6T & 13T SRAM Bit Cell & using FinFET to construct the superior in 22nm Scale for usage in Spacecrafts

Abstract: The soft error in SRAM is generated as the single ionizing particle strikes a sensitive node .This gives rise to Single Event Upsets (SEU) .Here in this paper we design and examine the 6T and 13T SRAMs and use FinFET in 22nm technology node in Microwind 3.8 and Tanner EDA Tool . A feedback which would be driven on dual mode would be added to the design, to combat the residual deposition of charges .

Key words: FinFET; SEU; SRAM

Cite as: JOSarXiv.202012.0001

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