Topological materials-based photodetectors from the infrared to terahertz range

Abstract: Infrared and terahertz waves are important bands in the electromagnetic spectrum, characterized by their strong penetrability and non-ionizing radiation. They are capable of achieving high-resolution and non-destructive detection, holding significant research value in fields such as communication technology, biomedicine, and security screening. Two-dimensional materials, with their unique optoelectronic properties, are widely used in photodetection; however, they are not well-suited for detecting lower photon energies. Moreover, with the development of device integration, they fail to meet the requirements for device miniaturization and high performance. Topological materials, with their topologically protected electronic states and non-trivial topological invariants, exhibit quantum anomalous Hall effects and ultra-high carrier mobility, providing a new approach for seeking photosensitive materials for infrared and terahertz photodetectors. This article introduces various types of topological materials and their properties, followed by an explanation of the detection mechanism and performance parameters of photodetectors. Finally, it summarizes the current research status of near-infrared to far-infrared photodetectors and terahertz photodetectors based on topological materials, discussing the challenges faced and future prospects in their development.

Key words: infrared photodetectors; terahertz photodetectors; topological materials

Cite as: JOSarXiv.202501.0002

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