Yurui Han,1 Yuefei Wang,1 Danyang Xia,1 Shihao Fu,1 Chong Gao,1Jiangang Ma,1Haiyang Xu,1 Bingsheng Li,1,* Aidong Shen,2 Yichun Liu1
Corresponding Author: Bingsheng Li, firstname.lastname@example.org
Abstract: We report a high-detectivity solar-blind deep UV photodetector with a fast response speed, based on a nitrogen-doped graphene/βGa2O3/GaN p-i-n heterojunction, in which the i layer of βGa2O3 was obtained by reversed substitution growth with oxygen replacing nitrogen in the GaN matrix. XPS demonstrated the Fermi level of βGa2O3 to be 0.2 eV lower than the central level of the forbidden band, indicating that the dominant carriers are holes. XRD shows that the transformation of GaN into (-201) preferred-orientation βGa2O3 occurs above 900 oC in an oxygen ambient. The heterojunction shows enhanced self-powered solar blind detection ability with a response time of 3.2 μs (rise)/0.02 ms (delay) and a detectivity exceeding 1012 Jones. Under a bias of -5 V, the photoresponsivity is 8.3 A/W with a high Ilight/Idark ratio of over 106and a detectivity of ~9 × 1014Jones. The excellent performance of the device is attributed to two factors. Firstly, its continuous conduction band without a potential energy barrier, and the larger built-in potential in the heterojunction because Fermi energy level shifts downward in βGa2O3. Secondly, an enhanced built-in electric field in the βGa2O3 due to introducing p-type graphene with a high hole concentration of up to ~1020 cm−3.
Cite as: JOSarXiv.202303.0003
Article views: 0 Times PDF downloads: 0 Times
Manuscript received: 03 March 2023
Manuscript published: 08 March 2023