Xiaomei Chen, Bin Li, Yuxiu Niu
Corresponding Author: ${correspondingAuthorString}
Abstract: A miniaturized InGaAs/InP single photon avalanche diode device with integrated thermoelectric cooler is demonstrated. A planar type separate absorption, grading, charge and multiplication structure InGaAs/InP single photon avalanche diode chip is made of Zn diffusion. By integrating the chip, a thermoelectric cooler and a thermistor into a 8-pin butterfly case, the device can cool the chip to - 40℃ at an ambient temperature of 50℃. It can achieve 21.1% single photon detection efficiency, 1.04kHz dark count rate and 1.32% after pulsing probability when the chip is cooled to - 40℃ by the integrated TEC.
Key words: Single photon avalanche diode; InGaAs/InP; integrated thermoelectric cooler
Cite as: JOSarXiv.202112.0006
Version History
[V1] | 2021-12-22 10:02:57 | JOSarXiv.202112.0006V1 | Download |
Article views: 69 Times PDF downloads: 5 Times
Manuscript received: 22 December 2021
Manuscript published: 07 January 2022
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