Abstract: A miniaturized InGaAs/InP single photon avalanche diode device with integrated thermoelectric cooler is demonstrated. A planar type separate absorption, grading, charge and multiplication structure InGaAs/InP single photon avalanche diode chip is made of Zn diffusion. By integrating the chip, a thermoelectric cooler and a thermistor into a 8-pin butterfly case, the device can cool the chip to - 40℃ at an ambient temperature of 50℃. It can achieve 21.1% single photon detection efficiency, 1.04kHz dark count rate and 1.32% after pulsing probability when the chip is cooled to - 40℃ by the integrated TEC.

Key words: Single photon avalanche diode; InGaAs/InP; integrated thermoelectric cooler

Cite as: JOSarXiv.202112.0006

Recommended references: Xiaomei Chen, Bin Li, Yuxiu Niu . (2021). Miniaturized InGaAsInP Single photon avalanche diode with integrated thermoelectric cooler. [JOSarXiv.202112.0006] (Copy)

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2021-12-22 10:02:57

JOSarXiv.202112.0006V1

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