Convolutional neural networks (CNNs), inspired by biological visual cortex systems, are a powerful category of artificial neural networks that can extract the hierarchical features of raw data to greatly reduce the network parametric complexity and enhance the predicting accuracy. They are of significant interest for machine learning tasks such as computer vision, speech recognition, playing board games and medical diagnosis [1-7]. Optical neural networks offer the promise of dramatically accelerating computing speed to overcome the inherent bandwidth bottleneck of electronics. Here, we demonstrate a universal optical vector convolutional accelerator operating beyond 10 Tera-FLOPS (floating point operations per second), generating convolutions of images of 250,000 pixels with 8-bit resolution for 10 kernels simultaneously — enough for facial image recognition. We then use the same hardware to sequentially form a deep optical CNN with ten output neurons, achieving successful recognition of full 10 digits with 900 pixel handwritten digit images with 88% accuracy. Our results are based on simultaneously interleaving temporal, wavelength and spatial dimensions enabled by an integrated microcomb source. This approach is scalable and trainable to much more complex networks for demanding applications such as unmanned vehicle and real-time video recognition.
Xingyuan Xu, Mengxi Tan, Bill Corcoran, Jiayang Wu, Andreas Boes, Thach G. Nguyen, Sai T. Chu, Brent E. Little, Damien G. Hicks, Roberto Morandotti, Arnan Mitchell, and David J. Moss
JOSarXiv.202102.0002 (Submitted on 2021-02-24)
Abstract(50) PDF (4)
He Li, Menglin Huang and Shiyou Chen
JOSarXiv.202003.0001 (Submitted on 2020-03-20)
Abstract(218) PDF (18)
Using first-principles calculations, we explored all the 21 defect-pairs in GaN and considered 6 configurations with different defect-defect distances for each defect-pair. 15 defect-pairs with short defect-defect distances are found to be stable during structural relaxation, so they can exist in the GaN lattice once formed during the irradiation of high-energy particles. 9 defect-pairs have formation energies lower than 10 eV in the neutral state. The vacancy-pair VN-VN is found to have very low formation energies, as low as 0 eV in p-type and Ga-rich GaN, and act as efficient donors producing two deep donor levels, which can limit the p-type doping and minority carrier lifetime in GaN. VN-VN has been overlooked in the previous study of defects in GaN. Most of these defect-pairs act as donors and produce a large number of defect levels in the band gap. Their formation energies and concentrations are sensitive to the chemical potentials of Ga and N, so their influences on the electrical and optical properties of Ga-rich and N-rich GaN after irradiation should differ significantly. These results about the defect-pairs provide fundamental data for understanding the radiation damage mechanism in GaN and simulating the defect formation and diffusion behavior under irradiation.
Gang Wang, Juan Lv, Hongjuan Wang, Xiang-Wei Jiang*, Jun-Wei Luo*, and Shu-Shen Li
JOSarXiv.202001.0001 (Submitted on 2020-01-02)
Abstract(1242) PDF (18)
The potential fluctuations from individual impurities in a MOSFET was recognized as being an important factor that degrades the nanoscale transistors, requiring to control the positioning of these impurities to improve the reproducibility and reliability. In this paper, we study the fluctuations in the hole mobility arising from the randomly placing of Si and Ge atoms within the SiGe channel, which is considering to replace the silicon channel in an attempt to boost the hole mobility due to Ge offering four times higher hole mobility than Si. We conclude that (i) the hole mobility fluctuates in a large range (as large as 100%) among distinct arrangements of Si and Ge atoms within the 9 nm scale SiGe channel, (ii) arising mainly from the switching of band order and admixture between heavy-hole and light-hole bands, (iii) that in turn causes fluctuations in off current Ioff and threshold voltage Vth, and makes reproducibility a challenge for SiGe to be a Si channel replacement for nanoscale PMOS.
Zeping Zhao, Jianguo Liu, Yu Liu, Ninghua Zhu
JOSarXiv.201912.0002 (Submitted on 2020-01-02)
Abstract(526) PDF (9)
This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetectors from development history, research hotspots to packaging technologies is provided to the best of our knowledge. A few typical applications based on photodetectors are also illustrated, such as free-space optical communications, radio over fiber and millimeter terahertz signal generation systems.
- Physics Materials and Devices of Conventional Semiconductors (4)
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- Organic and Perovskite Semiconductors Based Optoelectronic Devices (1)
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