arXiv List
  • Silicon nanophotonic circuits based on Sagnac loop reflectors for high performance optical spectral filters

    David Moss

    JOSarXiv.202206.0004     (Submitted on 2022-06-20)

    Abstract(108) PDF (27)

    We present and investigate theoretically photonic integrated filters based on 2 Sagnac coupled loop reflectors (SLRs) that are arranged in a self-coupled optical waveguide. We recently presented photonic integrated filters based on coupled and cascaded SLRs. In this paper, we advance this field by investigating a unique approach of employing coupled SLRs formed by self-coupled waveguides. This allows us to achieve high performance filter functions including Fano-like resonances and wavelength interleaving with a simpler design and a higher fabrication tolerance by tailoring coherent mode interference in the device. Our design takes into account the device fabrication issues as well as the requirements for practical applications. As a guide for practical device fabrication, an analysis of the impact of the structural parameters and fabrication tolerance on each filter function is also provided. The Fano-like resonances show a low insertion loss (IL) of 1.1 dB, a high extinction ratio of 30.2 dB, and a high slope rate (SR) of 747.64 dB/nm. The combination of low IL and high SR promises this device for Fano resonance applications. Our device also can achieve wavelength de-interleaving function with high fabrication tolerance which is advantageous for applications such as optical interleavers that require a symmetric flat-top filter shape. Optical de-interleavers and interleavers are key components for optical signal multiplexing and demultiplexing for wavelength division multiplexing optical communication systems. Versatile spectral responses with a simple design, compact device footprint, and high fabrication tolerance make this approach highly promising for flexible response shaping for many applications.

  • Graphene oxide films integrated with nanowires and ring resonators for nonlinear optics

    David Moss

    JOSarXiv.202206.0003     (Submitted on 2022-06-20)

    Abstract(82) PDF (13)

    We report enhanced nonlinear optics in nanowires, waveguides, and ring resonators by introducing layered two-dimensional (2D) graphene oxide (GO) films through experimental demonstration. The GO films are integrated on silicon-on-insulator nanowires (SOI), high index doped silica glass, and silicon nitride (SiN) waveguides and microring resonators (MRRs), to demonstrate an improved optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). By using a large-area, transfer-free, layer-by-layer GO coating method with photolithography and lift-off processes, we integrate GO films on these complementary metal-oxide-semiconductor (CMOS)-compatible devices. For SOI nanowires, significant spectral broadening of optical pulses in GO-coated SOI nanowires induced by self-phase modulation (SPM) is observed, achieving a high spectral broadening factor of 4.34 for a device with a patterned film including 10 layers of GO. A significant enhancement in the nonlinear figure of merit (FOM) for silicon nanowires by a factor of 20 is also achieved, resulting in a FOM > 5. For Hydex and SiN waveguides, enhanced FWM in the GO-coated waveguides is achieved, where conversion efficiency (CE) enhancements of up to 6.9 dB and 9.1 dB relative to the uncoated waveguides. For MRRs, an increase of up to ~10.3 dB in the FWM CE is achieved due to the resonant enhancement effect. These results reveal the strong potential of GO films to improve the nonlinear optics of nanowires, waveguides, and ring resonators.

  • MODULATION OF THE SOLID REACTION BETWEEN NICKEL AND (100) GE SUBSTRATES BY AN ULTRATHIN ALUMINUM LAYER

    Huajun Ding,Zhongying Xue,Xing Wei

    JOSarXiv.202203.0001     (Submitted on 2022-03-15)

    Abstract(141) PDF (22)

    In this paper, the thermal stability of NiGe films formed on (100) Ge substrates was improved from 450 to 600°C by adding an ultrathin Al layer to the Ni deposition process. The improvement is due to the formation of Ni-Ge-Al hybrid layer on the NiGe surface, which acts as a capping layer to suppress the NiGe film from agglomerating at high temperatures. The sheet resistivity of NiGe is slightly reduced by the Al incorporation, making this method promising for S/D contact of Ge MOSFETs

  • Method for improving endurance and breakdown characteristics of metal/ferroelectric/metal capacitor by modulating deposition cycle ratio

    Denghuai Tian1, 2, Hao Xu1, †, Jiahui Duan1, Yanrong Wang2, Jinjuan Xiang1, Xiaolei Wang1, Jing Zhang2

    JOSarXiv.202201.0002     (Submitted on 2022-01-18)

    Abstract(169) PDF (30)

    Hafnium-based ferroelectric devices show great potential in the application of high-efficiency memory technology. In this work, we study the effect of modulating deposition cycle ratio on memory windows and endurance of metal/ferroelectric/metal (MFM) capacitors. We fabricated capacitors with 3 conditions for Hf0.5Zr0.5O2 thin film of the deposition cycle ratio are 1:1, 5:5, 10:10, respectively. All samples have nearly the same memory window and the devices with a 10:10 cycle ratio could tolerate more bipolar cycles. By comparing the leakage and breakdown characteristics, the improved endurance for the 10:10 device is due to the lower trap density of oxygen vacancy. Furthermore, the deposition cycle ratio can be further optimized to make the trade-off between the performance and reliability in the ferroelectric devices.

  • DASP: Defect and Dopant ab-initio Simulation Package

    Menglin Huang, Zhengneng Zheng, Zhenxing Dai, Xinjing Guo, Shanshan Wang, Lilai Jiang, Jinchen Wei, Shiyou Chen

    JOSarXiv.202201.0001     (Submitted on 2022-01-07)

    Abstract(305) PDF (45)

    In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, Defect and Dopant ab-initio Simulation Package (DASP), which is composed of four modules for calculating: (i) elemental chemical potentials, (ii) defect (dopant) formation energies and transition energy levels, (iii) defect and carrier densities and (iv) carrier dynamics properties of high-density defects. DASP uses the materials genome database for quick determination of competing secondary phases and calculation of the energy above convex hull when calculating the elemental chemical potential that stabilizes compound semiconductors, so it can perform high-throughput prediction of thermodynamic stability of multinary compounds. DASP calls the ab-initio softwares to perform the total energy, structural relaxation and electronic structure calculations of the defect supercells with different structure configurations and charge states, based on which the defect formation energies and transition energy levels are calculated and the corrections for electrostatic potential alignment and image charge interaction can be included. Then DASP can calculate the equilibrium densities of defects and electron and hole carriers as well as the Fermi level in semiconductors under different chemical potential conditions and different growth/working temperature. For high-density defects, DASP can calculate the carrier dynamics properties such as the photoluminescence (PL) spectrum, defect-related radiative and non-radiative carrier capture cross sections, and recombination lifetime of non-equilibrium carriers. DASP is expected to act as an automatic and reliable toolbox for calculating the defect and dopant properties, which can be compared to or used to interpret the experimental characterization results of defects using electrical and optical techniques such as PL and deep level transient spectroscopy (DLTS). Here we will introduce its unique functions including the maximumly-cubic supercell generation, distorted defect structure searching and wavefunction initialization which can reduce computational cost and improve accuracy, and also show three examples about its applications in undoped GaN, C-doped GaN and quasi-one-dimensional SbSeI.

  • Fabricated and characterize a conductive polymeric composite constituted from Nano Metals Graphene assembled in polymeric Matrix

    Ameen Abdelrahman, Fouad Erchiqui, Nedil Mourad

    JOSarXiv.202107.0001     (Submitted on 2021-09-24)

    Abstract(421) PDF (28)

    Our work aims to make a unique polymer to be used as a conductive and flexible chip antenna. Its properties are robustness, rigidity, stretchability, and good conduction. The fabricated composite is composed of two copolymers, Polydimethylsiloxane (PDMS) and Polyethylenimine (PEI), assembled with nano metals (Copper, Silver ), and graphene nanoparticles as a matrix. Nano metals fill out the inter-layer space, and polymer voids reinforce the cross linker. Graphene/metal nanoparticles help make chelating complexes using metallic bonds, enhancing the polymer’s conductivity from 1.87 × 10-4 to 5.64 ×10-6 σ Scm-1. We analyze the conductivity, self-healing, and surface morphology of fabricated composite using different spectroscopic techniques, such as electrochemical impedance (EIS), Scanning Electronic Microscopy ( SEM), Transition Electronic Microscopy (TEM) , Infrared spectroscopy ( IR) , UV-Visible spectroscopy (UV), and a particle size analyzer.

  • yolov3模型在图形晶圆表面缺陷检测上的优化与应用

    肖安七, 吕肃, 张嵩

    JOSarXiv.202108.0001     (Submitted on 2021-08-16)

    Abstract(199) PDF (17)

    传统的缺陷检测算法已不能满足半导体图形晶圆表面缺陷检测的要求,而近年来快速发展的深度学习技术,尤其是目标检测技术提供了一种新的解决思路。但是已知的绝大多数目标检测模型都是基于特定的公开数据集设计的,并不一定适合晶圆缺陷检测场景。考虑到yolov3模型已在实践中得到广泛应用,所以本文在yolov3模型的基础上进行适当修改和优化,使之适应半导体图形晶圆表面的缺陷检测场景,修改后的模型称为Sky-yolov3。实验结果表明,Sky-yolov3模型可以在几乎不牺牲推理速度的情况下性能提升6.09%。

  • Direct calculations on the band offsets of large-lattice-mismatched and heterovalent Si and III-V semiconductors

    Yu-Ying Hu, Chen Qiu, Tao Shen, Kaike Yang, Hui-Xiong Deng

    JOSarXiv.202105.0001     (Submitted on 2021-05-21)

    Abstract(283) PDF (44)

    Band offset in semiconductors is a fundamental physical quantity that determines the performance of optoelectronic devices. However, the current method of calculating band offset is difficult to be applied directly to the large-lattice-mismatched and heterovalent semiconductors because of existing electric field and large strain at the interfaces. Here, we proposed a modified method to calculate band offsets for such systems, in which the core energy level shifts caused by heterovalent effects and lattice mismatch are estimated by interface reconstruction and insertion of unidirectional strain structures as transitions, respectively. Taking the Si and III-V systems as examples, the results have the same accuracy as widely used method for small-lattice-mismatched systems, and are much closer to the experimental values for the large-lattice-mismatched and heterovalent systems. Furthermore, by systematically studying the heterojunctions of Si and III-V semiconductors along different directions, it is found that the band offsets of Si/InAs and Si/InSb systems in [100], [110] and [111] directions belong to the type I, and could be beneficial for silicon-based luminescence performance. Our study offers a more reliable and direct method for calculating band offsets of large-lattice-mismatched and heterovalent semiconductors, and could provide theoretical support for the design of the high-performance silicon-based light sources.

  • Integrated 2D graphene oxide films for applications to ultra-flat optics and nonlinear integrated photonic chips

    David Moss

    JOSarXiv.202104.0003     (Submitted on 2021-05-13)

    Abstract(194) PDF (17)

    With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of two-dimensional (2D) materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences. This paper presents our recent advances in this emerging field, including the optical properties of GO as well as methods for the on-chip integration of GO. Our main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.

  • High bandwidth temporal RF photonic signal processing with Kerr micro-combs: integration, fractional differentiation and Hilbert transforms

    Mengxi Tan, Xingyuan Xu, Jiayang Wu, and David J. Moss

    JOSarXiv.202102.0001     (Submitted on 2021-05-13)

    Abstract(132) PDF (10)

    Integrated Kerr micro-combs, a powerful source of many wavelengths for photonic RF and microwave signal processing, are particularly useful for transversal filter systems. They have many advantages including a compact footprint, high versatility, large numbers of wavelengths, and wide bandwidths. We review recent progress on photonic RF and microwave high bandwidth temporal signal processing based on Kerr micro-combs with spacings from 49-200GHz. We cover integral and fractional Hilbert transforms, differentiators as well as integrators. The potential of optical micro-combs for RF photonic applications in functionality and ability to realize integrated solutions is also discussed.

  • First
  • Prev
  • 1
  • 2
  • Last
  • Go