arXiv List
  • Alloy fluctuating in hole mobility limiting the use of Si1-xGex channel for nanoscale PMOS

    Gang Wang, Juan Lv, Hongjuan Wang, Xiang-Wei Jiang*, Jun-Wei Luo*, and Shu-Shen Li

    JOSarXiv.202001.0001     (Submitted on 2020-01-02)

    Abstract(893) PDF (11)

    The potential fluctuations from individual impurities in a MOSFET was recognized as being an important factor that degrades the nanoscale transistors, requiring to control the positioning of these impurities to improve the reproducibility and reliability. In this paper, we study the fluctuations in the hole mobility arising from the randomly placing of Si and Ge atoms within the SiGe channel, which is considering to replace the silicon channel in an attempt to boost the hole mobility due to Ge offering four times higher hole mobility than Si. We conclude that (i) the hole mobility fluctuates in a large range (as large as 100%) among distinct arrangements of Si and Ge atoms within the 9 nm scale SiGe channel, (ii) arising mainly from the switching of band order and admixture between heavy-hole and light-hole bands, (iii) that in turn causes fluctuations in off current Ioff and threshold voltage Vth, and makes reproducibility a challenge for SiGe to be a Si channel replacement for nanoscale PMOS.

  • High-speed photodetectors in optical communication system

    Zeping Zhao, Jianguo Liu, Yu Liu, Ninghua Zhu

    JOSarXiv.201912.0002     (Submitted on 2020-01-02)

    Abstract(444) PDF (7)

    This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetectors from development history, research hotspots to packaging technologies is provided to the best of our knowledge. A few typical applications based on photodetectors are also illustrated, such as free-space optical communications, radio over fiber and millimeter terahertz signal generation systems.