In this paper, the thermal stability of NiGe films formed on (100) Ge substrates was improved from 450 to 600°C by adding an ultrathin Al layer to the Ni deposition process. The improvement is due to the formation of Ni-Ge-Al hybrid layer on the NiGe surface, which acts as a capping layer to suppress the NiGe film from agglomerating at high temperatures. The sheet resistivity of NiGe is slightly reduced by the Al incorporation, making this method promising for S/D contact of Ge MOSFETs
MODULATION OF THE SOLID REACTION BETWEEN NICKEL AND (100) GE SUBSTRATES BY AN ULTRATHIN ALUMINUM LAYER
Huajun Ding,Zhongying Xue,Xing Wei
JOSarXiv.202203.0001 (Submitted on 2022-03-15)
Abstract(99) PDF (12)
Method for improving endurance and breakdown characteristics of metal/ferroelectric/metal capacitor by modulating deposition cycle ratio
Denghuai Tian1, 2, Hao Xu1, †, Jiahui Duan1, Yanrong Wang2, Jinjuan Xiang1, Xiaolei Wang1, Jing Zhang2
JOSarXiv.202201.0002 (Submitted on 2022-01-18)
Abstract(138) PDF (23)
Hafnium-based ferroelectric devices show great potential in the application of high-efficiency memory technology. In this work, we study the effect of modulating deposition cycle ratio on memory windows and endurance of metal/ferroelectric/metal (MFM) capacitors. We fabricated capacitors with 3 conditions for Hf0.5Zr0.5O2 thin film of the deposition cycle ratio are 1:1, 5:5, 10:10, respectively. All samples have nearly the same memory window and the devices with a 10:10 cycle ratio could tolerate more bipolar cycles. By comparing the leakage and breakdown characteristics, the improved endurance for the 10:10 device is due to the lower trap density of oxygen vacancy. Furthermore, the deposition cycle ratio can be further optimized to make the trade-off between the performance and reliability in the ferroelectric devices.
Menglin Huang, Zhengneng Zheng, Zhenxing Dai, Xinjing Guo, Shanshan Wang, Lilai Jiang, Jinchen Wei, Shiyou Chen
JOSarXiv.202201.0001 (Submitted on 2022-01-07)
Abstract(245) PDF (30)
In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, Defect and Dopant ab-initio Simulation Package (DASP), which is composed of four modules for calculating: (i) elemental chemical potentials, (ii) defect (dopant) formation energies and transition energy levels, (iii) defect and carrier densities and (iv) carrier dynamics properties of high-density defects. DASP uses the materials genome database for quick determination of competing secondary phases and calculation of the energy above convex hull when calculating the elemental chemical potential that stabilizes compound semiconductors, so it can perform high-throughput prediction of thermodynamic stability of multinary compounds. DASP calls the ab-initio softwares to perform the total energy, structural relaxation and electronic structure calculations of the defect supercells with different structure configurations and charge states, based on which the defect formation energies and transition energy levels are calculated and the corrections for electrostatic potential alignment and image charge interaction can be included. Then DASP can calculate the equilibrium densities of defects and electron and hole carriers as well as the Fermi level in semiconductors under different chemical potential conditions and different growth/working temperature. For high-density defects, DASP can calculate the carrier dynamics properties such as the photoluminescence (PL) spectrum, defect-related radiative and non-radiative carrier capture cross sections, and recombination lifetime of non-equilibrium carriers. DASP is expected to act as an automatic and reliable toolbox for calculating the defect and dopant properties, which can be compared to or used to interpret the experimental characterization results of defects using electrical and optical techniques such as PL and deep level transient spectroscopy (DLTS). Here we will introduce its unique functions including the maximumly-cubic supercell generation, distorted defect structure searching and wavefunction initialization which can reduce computational cost and improve accuracy, and also show three examples about its applications in undoped GaN, C-doped GaN and quasi-one-dimensional SbSeI.
Fabricated and characterize a conductive polymeric composite constituted from Nano Metals Graphene assembled in polymeric Matrix
Ameen Abdelrahman, Fouad Erchiqui, Nedil Mourad
JOSarXiv.202107.0001 (Submitted on 2021-09-24)
Abstract(369) PDF (21)
Our work aims to make a unique polymer to be used as a conductive and flexible chip antenna. Its properties are robustness, rigidity, stretchability, and good conduction. The fabricated composite is composed of two copolymers, Polydimethylsiloxane (PDMS) and Polyethylenimine (PEI), assembled with nano metals (Copper, Silver ), and graphene nanoparticles as a matrix. Nano metals fill out the inter-layer space, and polymer voids reinforce the cross linker. Graphene/metal nanoparticles help make chelating complexes using metallic bonds, enhancing the polymer’s conductivity from 1.87 × 10-4 to 5.64 ×10-6 σ Scm-1. We analyze the conductivity, self-healing, and surface morphology of fabricated composite using different spectroscopic techniques, such as electrochemical impedance (EIS), Scanning Electronic Microscopy ( SEM), Transition Electronic Microscopy (TEM) , Infrared spectroscopy ( IR) , UV-Visible spectroscopy (UV), and a particle size analyzer.
肖安七, 吕肃, 张嵩
JOSarXiv.202108.0001 (Submitted on 2021-08-16)
Abstract(151) PDF (3)
Direct calculations on the band offsets of large-lattice-mismatched and heterovalent Si and III-V semiconductors
Yu-Ying Hu, Chen Qiu, Tao Shen, Kaike Yang, Hui-Xiong Deng
JOSarXiv.202105.0001 (Submitted on 2021-05-21)
Abstract(254) PDF (37)
Band offset in semiconductors is a fundamental physical quantity that determines the performance of optoelectronic devices. However, the current method of calculating band offset is difficult to be applied directly to the large-lattice-mismatched and heterovalent semiconductors because of existing electric field and large strain at the interfaces. Here, we proposed a modified method to calculate band offsets for such systems, in which the core energy level shifts caused by heterovalent effects and lattice mismatch are estimated by interface reconstruction and insertion of unidirectional strain structures as transitions, respectively. Taking the Si and III-V systems as examples, the results have the same accuracy as widely used method for small-lattice-mismatched systems, and are much closer to the experimental values for the large-lattice-mismatched and heterovalent systems. Furthermore, by systematically studying the heterojunctions of Si and III-V semiconductors along different directions, it is found that the band offsets of Si/InAs and Si/InSb systems in ,  and  directions belong to the type I, and could be beneficial for silicon-based luminescence performance. Our study offers a more reliable and direct method for calculating band offsets of large-lattice-mismatched and heterovalent semiconductors, and could provide theoretical support for the design of the high-performance silicon-based light sources.
Integrated 2D graphene oxide films for applications to ultra-flat optics and nonlinear integrated photonic chips
JOSarXiv.202104.0003 (Submitted on 2021-05-13)
Abstract(164) PDF (10)
With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of two-dimensional (2D) materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences. This paper presents our recent advances in this emerging field, including the optical properties of GO as well as methods for the on-chip integration of GO. Our main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.
High bandwidth temporal RF photonic signal processing with Kerr micro-combs: integration, fractional differentiation and Hilbert transforms
Mengxi Tan, Xingyuan Xu, Jiayang Wu, and David J. Moss
JOSarXiv.202102.0001 (Submitted on 2021-05-13)
Abstract(104) PDF (2)
Integrated Kerr micro-combs, a powerful source of many wavelengths for photonic RF and microwave signal processing, are particularly useful for transversal filter systems. They have many advantages including a compact footprint, high versatility, large numbers of wavelengths, and wide bandwidths. We review recent progress on photonic RF and microwave high bandwidth temporal signal processing based on Kerr micro-combs with spacings from 49-200GHz. We cover integral and fractional Hilbert transforms, differentiators as well as integrators. The potential of optical micro-combs for RF photonic applications in functionality and ability to realize integrated solutions is also discussed.
Xingyuan Xu, Mengxi Tan, Bill Corcoran, Jiayang Wu, Andreas Boes, Thach G. Nguyen, Sai T. Chu, Brent E. Little, Damien G. Hicks, Roberto Morandotti, Arnan Mitchell, and David J. Moss
JOSarXiv.202102.0002 (Submitted on 2021-02-24)
Abstract(161) PDF (6)
Convolutional neural networks (CNNs), inspired by biological visual cortex systems, are a powerful category of artificial neural networks that can extract the hierarchical features of raw data to greatly reduce the network parametric complexity and enhance the predicting accuracy. They are of significant interest for machine learning tasks such as computer vision, speech recognition, playing board games and medical diagnosis [1-7]. Optical neural networks offer the promise of dramatically accelerating computing speed to overcome the inherent bandwidth bottleneck of electronics. Here, we demonstrate a universal optical vector convolutional accelerator operating beyond 10 Tera-FLOPS (floating point operations per second), generating convolutions of images of 250,000 pixels with 8-bit resolution for 10 kernels simultaneously — enough for facial image recognition. We then use the same hardware to sequentially form a deep optical CNN with ten output neurons, achieving successful recognition of full 10 digits with 900 pixel handwritten digit images with 88% accuracy. Our results are based on simultaneously interleaving temporal, wavelength and spatial dimensions enabled by an integrated microcomb source. This approach is scalable and trainable to much more complex networks for demanding applications such as unmanned vehicle and real-time video recognition.
He Li, Menglin Huang and Shiyou Chen
JOSarXiv.202003.0001 (Submitted on 2020-03-20)
Abstract(354) PDF (22)
Using first-principles calculations, we explored all the 21 defect-pairs in GaN and considered 6 configurations with different defect-defect distances for each defect-pair. 15 defect-pairs with short defect-defect distances are found to be stable during structural relaxation, so they can exist in the GaN lattice once formed during the irradiation of high-energy particles. 9 defect-pairs have formation energies lower than 10 eV in the neutral state. The vacancy-pair VN-VN is found to have very low formation energies, as low as 0 eV in p-type and Ga-rich GaN, and act as efficient donors producing two deep donor levels, which can limit the p-type doping and minority carrier lifetime in GaN. VN-VN has been overlooked in the previous study of defects in GaN. Most of these defect-pairs act as donors and produce a large number of defect levels in the band gap. Their formation energies and concentrations are sensitive to the chemical potentials of Ga and N, so their influences on the electrical and optical properties of Ga-rich and N-rich GaN after irradiation should differ significantly. These results about the defect-pairs provide fundamental data for understanding the radiation damage mechanism in GaN and simulating the defect formation and diffusion behavior under irradiation.
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