We report a high-detectivity solar-blind deep UV photodetector with a fast response speed, based on a nitrogen-doped graphene/βGa2O3/GaN p-i-n heterojunction, in which the i layer of βGa2O3 was obtained by reversed substitution growth with oxygen replacing nitrogen in the GaN matrix. XPS demonstrated the Fermi level of βGa2O3 to be 0.2 eV lower than the central level of the forbidden band, indicating that the dominant carriers are holes. XRD shows that the transformation of GaN into (-201) preferred-orientation βGa2O3 occurs above 900 oC in an oxygen ambient. The heterojunction shows enhanced self-powered solar blind detection ability with a response time of 3.2 μs (rise)/0.02 ms (delay) and a detectivity exceeding 1012 Jones. Under a bias of -5 V, the photoresponsivity is 8.3 A/W with a high Ilight/Idark ratio of over 106and a detectivity of ~9 × 1014Jones. The excellent performance of the device is attributed to two factors. Firstly, its continuous conduction band without a potential energy barrier, and the larger built-in potential in the heterojunction because Fermi energy level shifts downward in βGa2O3. Secondly, an enhanced built-in electric field in the βGa2O3 due to introducing p-type graphene with a high hole concentration of up to ~1020 cm−3.

We investigated the influence of the growth temperature, O₂ flow, molar ratio between Ga₂O₃ powder and graphite powder on the structure and morphology of the films grown on the c-plane sapphire (0001) substrates by carbothermal reduction method. Experimental results for the heteroepitaxial growth of β-Ga₂O₃ illustrate that β-Ga₂O₃ growth by carbothermal reduction method can be controlled. The optimal result was obtained at a growth temperature of 1050°C. The fastest growth rate of β-Ga₂O₃ films was produced when the O₂ flow was 20 sccm. To guarantee that β-Ga₂O₃ films with both high-quality crystal and morphology properties, the ideal molar ratio between graphite powder and Ga₂O₃ powder should be set at 10:1.

We investigate the multi-phonon sidebands of the optical spectra of point defects in GaN based on the Huang-Rhys model, in which the localized phonon modes and the reorganization energy associated with the defect structure GaN: C_N+O_N are precisely calculated by ab initio approach. We present multi-phonon sidebands for both the localized phonon modes and intrinsic longitudinal optical phonon modes and give the comparisons between them in detail. Meanwhile, different types of the combinational phonon sidebands that are consisted of two localized phonon modes with different proportions are proposed. These multi-phonon sidebands not only could be used for the analysis of fine structure of the optical spectra, but also served as the fingerprints for the defect structures.

Gallium Oxide (Ga₂O₃) has attracted significant research interest for next-generation high-efficiency power devices because of their unique electronic properties such as ultra-wide band gap, high breakdown electric field, and large Baliga's figure of merit. Ga₂O₃ crystallizes in a series of reported polymorphs including β-, α-, ε-, κ-, γ- and δ-Ga₂O₃, the structures of some of which are still in serious controversy. We herein performed a polymorph structure search study of Ga₂O₃ by combining particle swarm optimization with first-principles energetic calculations. In addition to producing the predominant experimental known phases of β-, α- and κ-Ga₂O₃, we found two new polymorphs with space group P-1 and Pmc2₁ consisting of four- and five-fold coordinated Ga. They show comparable energy with β- and α-Ga₂O₃ with the energy difference of several meV/atom, and exhibit robust phonon stability. Similarly, the new phases show quite wide band gaps and small electron effective masses by comparing it with other known phases. The Pmc2₁ phase shows a calculated spontaneous polarization of 0.277 C/m², close to that of ε/κ-Ga₂O₃. Our systemic structure searches also establish a structural relationship between ε-Ga₂O₃ and κ-Ga₂O₃ and how the electronic properties vary with polymorphic phase change.