In this polishing experiment, the polishing effects of different crystal facets (Ga-face and N-face) of single-crystal gallium nitride (GaN) during the process of Photo-Catalyzed Chemical Mechanical Polishing (PACMP) were investigated by combining photocatalysis with chemical mechanical polishing (CMP). Furthermore, the influence mechanisms of polishing effects on different crystal facets were analyzed. Additionally, a comparison was made among three polishing methods: polishing without light, polishing with light polishing pad, and polishing with light polishing slurry. Various factors, such as TiO2 concentration, pH value, H2O2 concentration, polishing pressure, polishing pad rotational speed, and polishing slurry flow rate, were also studied to determine their impact on the polishing effects of GaN crystals on different facets. The process parameters were optimized accordingly.The experiments demonstrated that under the conditions of Photo-Catalyzed Chemical Mechanical Polishing with ultraviolet light assistance, the material removal rate (MRR) of Ga-face of GaN crystals can reach 698.864 nm/h, with a surface roughness (Ra) value of 0.430 nm and a root mean square height (Sq) of 0.842 nm. The MRR of N-face of GaN crystals can reach 619.435 nm/h, with an Ra value of 0.725 nm and an Sq of 1.162 nm. The composite polishing method of ultraviolet light-assisted CMP can achieve sub-nanometer-level super-smooth GaN crystal surfaces. Among them, the light polishing slurry method significantly improves the polishing efficiency and facilitates the rapid removal of Ga2O3 on the GaN surface.
Experimental Investigation of Photocatalytic Assisted CMP on Different Crystal Planes of Single Crystal GaN
Youming Yang, Hai Zhou, Shixiang Hu, Liqin Xia, Ziyang Meng
JOSarXiv.202309.0002 (Submitted on 2023-09-22)
Abstract(66) PDF (21)
Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/βGa2O3:N/GaN p-i-n Heterojunction Fabricated by a Reversed Substitution Growth Method
Yurui Han,1 Yuefei Wang,1 Danyang Xia,1 Shihao Fu,1 Chong Gao,1Jiangang Ma,1Haiyang Xu,1 Bingsheng Li,1,* Aidong Shen,2 Yichun Liu1
JOSarXiv.202303.0003 (Submitted on 2023-03-08)
Abstract(297) PDF (52)
We report a high-detectivity solar-blind deep UV photodetector with a fast response speed, based on a nitrogen-doped graphene/βGa2O3/GaN p-i-n heterojunction, in which the i layer of βGa2O3 was obtained by reversed substitution growth with oxygen replacing nitrogen in the GaN matrix. XPS demonstrated the Fermi level of βGa2O3 to be 0.2 eV lower than the central level of the forbidden band, indicating that the dominant carriers are holes. XRD shows that the transformation of GaN into (-201) preferred-orientation βGa2O3 occurs above 900 oC in an oxygen ambient. The heterojunction shows enhanced self-powered solar blind detection ability with a response time of 3.2 μs (rise)/0.02 ms (delay) and a detectivity exceeding 1012 Jones. Under a bias of -5 V, the photoresponsivity is 8.3 A/W with a high Ilight/Idark ratio of over 106and a detectivity of ~9 × 1014Jones. The excellent performance of the device is attributed to two factors. Firstly, its continuous conduction band without a potential energy barrier, and the larger built-in potential in the heterojunction because Fermi energy level shifts downward in βGa2O3. Secondly, an enhanced built-in electric field in the βGa2O3 due to introducing p-type graphene with a high hole concentration of up to ~1020 cm−3.
β-Ga2O3 thick films epitaxy on c-plane sapphire substrate by carbothermal reduction rapid growth method
Liyuan CHENG, Hezhi ZHANG, Wenhui ZHANG, Hongwei LIANG
JOSarXiv.202303.0001 (Submitted on 2023-03-02)
Abstract(254) PDF (44)
We investigated the influence of the growth temperature, O2 flow, molar ratio between Ga2O3 powder and graphite powder on the structure and morphology of the films grown on the c-plane sapphire (0001) substrates by carbothermal reduction method. Experimental results for the heteroepitaxial growth of β-Ga2O3 illustrate that β-Ga2O3 growth by carbothermal reduction method can be controlled. The optimal result was obtained at a growth temperature of 1050°C. The fastest growth rate of β-Ga2O3 films was produced when the O2 flow was 20 sccm. To guarantee that β-Ga2O3 films with both high-quality crystal and morphology properties, the ideal molar ratio between graphite powder and Ga2O3 powder should be set at 10:1.
Yao Xiao, Wen Xiong, Ziwu Wang
JOSarXiv.202101.0002 (Submitted on 2021-01-26)
Abstract(503) PDF (76)
We investigate the multi-phonon sidebands of the optical spectra of point defects in GaN based on the Huang-Rhys model, in which the localized phonon modes and the reorganization energy associated with the defect structure GaN: CN+ON are precisely calculated by ab initio approach. We present multi-phonon sidebands for both the localized phonon modes and intrinsic longitudinal optical phonon modes and give the comparisons between them in detail. Meanwhile, different types of the combinational phonon sidebands that are consisted of two localized phonon modes with different proportions are proposed. These multi-phonon sidebands not only could be used for the analysis of fine structure of the optical spectra, but also served as the fingerprints for the defect structures.
Discovery of new polymorphs of gallium oxides with particle swarm optimization based structure searches
Xue Wang, Muhammad Faizan, Guangren Na, Xin He, YuHao Fu, Lijun Zhang
JOSarXiv.202004.0001 (Submitted on 2020-04-21)
Abstract(723) PDF (52)
Gallium Oxide (Ga2O3) has attracted significant research interest for next-generation high-efficiency power devices because of their unique electronic properties such as ultra-wide band gap, high breakdown electric field, and large Baliga's figure of merit. Ga2O3 crystallizes in a series of reported polymorphs including β-, α-, ε-, κ-, γ- and δ-Ga2O3, the structures of some of which are still in serious controversy. We herein performed a polymorph structure search study of Ga2O3 by combining particle swarm optimization with first-principles energetic calculations. In addition to producing the predominant experimental known phases of β-, α- and κ-Ga2O3, we found two new polymorphs with space group P-1 and Pmc21 consisting of four- and five-fold coordinated Ga. They show comparable energy with β- and α-Ga2O3 with the energy difference of several meV/atom, and exhibit robust phonon stability. Similarly, the new phases show quite wide band gaps and small electron effective masses by comparing it with other known phases. The Pmc21 phase shows a calculated spontaneous polarization of 0.277 C/m2, close to that of ε/κ-Ga2O3. Our systemic structure searches also establish a structural relationship between ε-Ga2O3 and κ-Ga2O3 and how the electronic properties vary with polymorphic phase change.
- Physics Materials and Devices of Conventional Semiconductors (20)
- Optoelectronic Devices and Integration (7)
- Wide Bandgap Semiconductors (5)
- Semiconductor Integrated Circuits (2)
- Semiconductor Quantum Devices and Physics (2)
- Organic and Perovskite Semiconductors Based Optoelectronic Devices (1)
- Two-Dimensional Materials and Related Physics and Devices (1)
- Semiconductor Spintronics (0)
- Flexible Electronics (0)
- Semiconductors New Energy (0)
- Microelectronic Devices and Technologies (0)