MODULATION OF THE SOLID REACTION BETWEEN NICKEL AND (100) GE SUBSTRATES BY AN ULTRATHIN ALUMINUM LAYER

Abstract: In this paper, the thermal stability of NiGe films formed on (100) Ge substrates was improved from 450 to 600°C by adding an ultrathin Al layer to the Ni deposition process. The improvement is due to the formation of Ni-Ge-Al hybrid layer on the NiGe surface, which acts as a capping layer to suppress the NiGe film from agglomerating at high temperatures. The sheet resistivity of NiGe is slightly reduced by the Al incorporation, making this method promising for S/D contact of Ge MOSFETs

Key words: NiGe; Al; thermal stability; agglomeration

Cite as: JOSarXiv.202203.0001

Version History