Method for improving endurance and breakdown characteristics of metal/ferroelectric/metal capacitor by modulating deposition cycle ratio

Abstract: Hafnium-based ferroelectric devices show great potential in the application of high-efficiency memory technology. In this work, we study the effect of modulating deposition cycle ratio on memory windows and endurance of metal/ferroelectric/metal (MFM) capacitors. We fabricated capacitors with 3 conditions for Hf0.5Zr0.5O2 thin film of the deposition cycle ratio are 1:1, 5:5, 10:10, respectively. All samples have nearly the same memory window and the devices with a 10:10 cycle ratio could tolerate more bipolar cycles. By comparing the leakage and breakdown characteristics, the improved endurance for the 10:10 device is due to the lower trap density of oxygen vacancy. Furthermore, the deposition cycle ratio can be further optimized to make the trade-off between the performance and reliability in the ferroelectric devices.

Key words: CMOS technology; Hafnium-based ferroelectric; Endurance; Breakdown; Cycle ratio

Cite as: JOSarXiv.202201.0002

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