Phonon sidebands of the optical spectrum for the defect structure GaN: C_N+O_N

Abstract: We investigate the multi-phonon sidebands of the optical spectra of point defects in GaN based on the Huang-Rhys model, in which the localized phonon modes and the reorganization energy associated with the defect structure GaN: C_N+O_N are precisely calculated by ab initio approach. We present multi-phonon sidebands for both the localized phonon modes and intrinsic longitudinal optical phonon modes and give the comparisons between them in detail. Meanwhile, different types of the combinational phonon sidebands that are consisted of two localized phonon modes with different proportions are proposed. These multi-phonon sidebands not only could be used for the analysis of fine structure of the optical spectra, but also served as the fingerprints for the defect structures.

Key words: multiphonon sidebands; Huang-Rhys model; Point defect

Cite as: JOSarXiv.202101.0002

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