In this paper, the principle of the plasma etching anisotropy of monocrystalline silicon along different crystal orientations is expounded. The process of creating deep holes in monocrystalline silicon and subsequently performing cross-cut etching to form a reaming zone is visually demonstrated through specific experimental design to meet the conditions. The relationship between crystal orientation, depth-to-width ratio, etching condition and etching anisotropy is analyzed in detail. Finally, the scenarios that can be applied by using this etching mechanism in the future are prospected.

The electrostatic discharge (ESD) protection circuit widely exists in the input and output ports of CMOS digital circuits, and electromagnetic pulse coupled into the device not only interacts with the CMOS circuit, but also acts on the protection circuit. This paper establishes on-chip electrostatic discharge protection circuit model, and draws the lattice temperature, current density and electric field intensity distribution from the multi-physical parameter model to explore the changes of the internal devices when the pulse comes. The results show that the ESD protection circuit has potential damage risk, and the injection of EMP leads to irreversible heat loss inside the circuit. In addition, pulse signals with different attributes will change the damage threshold of the circuit. These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip, which is helpful to carry out the reliability enhancement research of ESD protection circuit.

Brain-like information processing needs brain-like computing hardware. In recent decade, a range of brain-inspired analogue computing technologies has emerged. These technologies, such as in-memory computing with memristors, are expected to run machine learning tasks with high energy efficiency. It is widely recognized that these brain-inspired hardware gain efficiency through their non-von Neumann architecture, namely collocated processing and memory units. However, digital computing can also adopt non-von Neumann architecture to improve efficiency. Commercial analogue processors that can share the workloads of their digital counterparts are still beyond the horizon. Whether or not analogue computing can meet expectations remains uncertain. Here, we review the emergent analogue computing technologies, and interpret the rationale behind the advancements. Rather than emphasizing only the non-von Neumann architecture, we also stress the significance of space-time continuity in brain-like analogue systems. From a balanced perspective, we discuss the challenges and future directions for analogue computing.

High growth-rate synthesis is the characteristic feature of the horizontal gradient freezing technique by Bridgman for growth of single crystal such as InP, but the relevant growth is more exposed to Si contamination due the requirement of temperature higher than the melting point at the synthesize zone, therefore, the modified Bridgman methods HGF, and VGF that realizes by reducing the temperature of the growth region was developed which are the main topics discussed in this paper. Another improvement that presented is related by using pBN crucibles instead of using of quartz boat during the growth can degrading the Si contamination.

Nuclear batteries have attracted many attentions because of their long lifetime. Due to the large band gap and high radiation tolerance, diamond is an ideal material for the fabrication of the energy converter for nuclear batteries. In this work, a diamond Schottky barrier diode energy converter was prepared, and the performance of the device was studied by electron-beam induced current (EBIC) method. The energy converter can work under an electron beam irradiation with a beam current of μA order. The open-circuit voltage of the device is around 0.8 V, and a short-circuit current of several mA can be achieved. The maximum energy conversion efficiency of 3.19% is obtained under the beam current of 0.2 μA at 26 keV.

In this polishing experiment, the polishing effects of different crystal facets (Ga-face and N-face) of single-crystal gallium nitride (GaN) during the process of Photo-Catalyzed Chemical Mechanical Polishing (PACMP) were investigated by combining photocatalysis with chemical mechanical polishing (CMP). Furthermore, the influence mechanisms of polishing effects on different crystal facets were analyzed. Additionally, a comparison was made among three polishing methods: polishing without light, polishing with light polishing pad, and polishing with light polishing slurry. Various factors, such as TiO2 concentration, pH value, H2O2 concentration, polishing pressure, polishing pad rotational speed, and polishing slurry flow rate, were also studied to determine their impact on the polishing effects of GaN crystals on different facets. The process parameters were optimized accordingly.The experiments demonstrated that under the conditions of Photo-Catalyzed Chemical Mechanical Polishing with ultraviolet light assistance, the material removal rate (MRR) of Ga-face of GaN crystals can reach 698.864 nm/h, with a surface roughness (Ra) value of 0.430 nm and a root mean square height (Sq) of 0.842 nm. The MRR of N-face of GaN crystals can reach 619.435 nm/h, with an Ra value of 0.725 nm and an Sq of 1.162 nm. The composite polishing method of ultraviolet light-assisted CMP can achieve sub-nanometer-level super-smooth GaN crystal surfaces. Among them, the light polishing slurry method significantly improves the polishing efficiency and facilitates the rapid removal of Ga2O3 on the GaN surface.

Gate all around field effect transistors (GAA-FET) are treated as best potentials for 3nm and beyond technology nodes attributed to their better short channel effect (SCE) suppression ability caused by surrounding gate structure. They have been put forth recently to replace Fin field effect transistor (FinFET), which had dominated the semiconductor market from 22nm to 5nm technology nodes. The device performance can be significantly impacted by device structure. Herein, we checked the scaling performance of the Si nanowire GAA-FET with a HfO2 thickness of 1nm, S/D doping concentration n of 1×10 20 /cm 3 , channel doping concentration of 1×1017 /cm 3 , animproved I on , degraded I off and SS with shrinking of the gate length (L g ) had been observed. On the other hand, an intensive study of the parameters variation impact on the device performance of Si nanowire GAA-FETs, including high k thickness, T ox ; nanowire radius, r, and source/drain doping concentration, n, had been conducted, the relation of SCE with respect to the parameters mentioned above had been sufficiently studied as well. It will be more promising if the super gate electrostatic control ability of GAA-FET structure is combined with ultra-steep behavior (brought about by negative capacitance effect, or tunnel effect and so on) to overcome the degraded SCEs and large power consumption dissipation problems

We report a high-detectivity solar-blind deep UV photodetector with a fast response speed, based on a nitrogen-doped graphene/βGa2O3/GaN p-i-n heterojunction, in which the i layer of βGa2O3 was obtained by reversed substitution growth with oxygen replacing nitrogen in the GaN matrix. XPS demonstrated the Fermi level of βGa2O3 to be 0.2 eV lower than the central level of the forbidden band, indicating that the dominant carriers are holes. XRD shows that the transformation of GaN into (-201) preferred-orientation βGa2O3 occurs above 900 oC in an oxygen ambient. The heterojunction shows enhanced self-powered solar blind detection ability with a response time of 3.2 μs (rise)/0.02 ms (delay) and a detectivity exceeding 1012 Jones. Under a bias of -5 V, the photoresponsivity is 8.3 A/W with a high Ilight/Idark ratio of over 106and a detectivity of ~9 × 1014Jones. The excellent performance of the device is attributed to two factors. Firstly, its continuous conduction band without a potential energy barrier, and the larger built-in potential in the heterojunction because Fermi energy level shifts downward in βGa2O3. Secondly, an enhanced built-in electric field in the βGa2O3 due to introducing p-type graphene with a high hole concentration of up to ~1020 cm−3.

Viable solar energy materials for solar cell application are on the front burner for researchers in material science due to the world energy crisis. We investigated the structural, electronic, phonon, and transport properties of ScAgC half Heusler alloy using the density functional theory based on the Purdue-Burke-Enzerhof generalized gradient approximation and HSE hybrid exchange-correlation functional implemented in quantum espresso. The band gap, lattice constant, and other structural and electronic property results obtained compare well with results from previous work. The hole and electron doping and carrier concentrations suggest that ScAgC is a better thermoelectric material and an n-type semiconductor. The optical properties show a high absorption coefficient, which increased from 7 × 104 cm−1 to 39 × 104 cm−1 through the visible light region. The high reflectivity exceeds 30% in the visible region and supports the use of ScAgC alloy in optoelectronic applications, solar and photovoltaic cells. The plasmon frequency for ScAgC alloy is 14.49 eV supporting its application as a solar cell material. The alloy is stable at low/medium temperatures but unstable at high temperatures. The clear wide phonon band gap between the acoustic and optical branches supports a strong ionic bonding that suggests the material is rigid.

We investigated the influence of the growth temperature, O₂ flow, molar ratio between Ga₂O₃ powder and graphite powder on the structure and morphology of the films grown on the c-plane sapphire (0001) substrates by carbothermal reduction method. Experimental results for the heteroepitaxial growth of β-Ga₂O₃ illustrate that β-Ga₂O₃ growth by carbothermal reduction method can be controlled. The optimal result was obtained at a growth temperature of 1050°C. The fastest growth rate of β-Ga₂O₃ films was produced when the O₂ flow was 20 sccm. To guarantee that β-Ga₂O₃ films with both high-quality crystal and morphology properties, the ideal molar ratio between graphite powder and Ga₂O₃ powder should be set at 10:1.